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02210 HCF4013 HMM5121B ICM72 2506N A1500 STWBC 2SC43
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  powermos Datasheet PDF File

For powermos Found Datasheets File :: 317    Search Time::1.047ms    
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    BUK454-200A BUK454-200B BUK454-200

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK454-200A BUK454-200B BUK454-200
OCR Text powermos transistor BUK454-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for use in surface mount applications. The device is intended for use in Switched Mode Powe...
Description powermos transistor

File Size 73.45K  /  7 Page

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    BUK454-60H

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK454-60H
OCR Text powermos transistor BUK454-60H GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications, Switched Mode Power Supplies (SMPS), motor ...
Description powermos transistor

File Size 47.09K  /  7 Page

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    BUK454-800A BUK454-800B

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK454-800A BUK454-800B
OCR Text powermos transistor BUK454-800A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/D...
Description powermos transistor

File Size 64.51K  /  7 Page

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    PHP6N60E PHB6N60E

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PHP6N60E PHB6N60E
OCR Text powermos transistors Avalanche energy rated FEATURES * Repetitive Avalanche Rated * Fast switching * Stable off-state characteristics * High thermal cycling performance * Low thermal resistance PHP6N60E, PHB6N60E SYMBOL d QUICK ...
Description powermos transistors Avalanche energy rated 5.4 A, 600 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 74.27K  /  9 Page

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    BUK210-50Y

NXP Semiconductors
Part No. BUK210-50Y
OCR Text powermos transistor buk210-50y topfet high side switch description quick reference data monolithic single channel high side symbol parameter min. unit protected power switch in topfet2 technology assembled in i l nominal load current (...
Description powermos transistor TOPFET high side switch

File Size 230.67K  /  13 Page

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    IRFP460

NXP Semiconductors
Philips Semiconductors
Part No. IRFP460
OCR Text powermos transistors Avalanche energy rated FEATURES * Repetitive Avalanche Rated * Fast switching * Stable off-state characteristics * High thermal cycling performance * Low thermal resistance IRFP460 SYMBOL d QUICK REFERENCE D...
Description powermos transistors Avalanche energy rated

File Size 89.75K  /  7 Page

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    BUK455-100 BUK455-100A BUK455-100B BUK455-100A/B

Philips Semiconductors
NXP Semiconductors
Part No. BUK455-100 BUK455-100A BUK455-100B BUK455-100A/B
OCR Text powermos transistor BUK455-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/D...
Description TRANSISTOR TO 220 MOSFET N KANAL
powermos transistor

File Size 68.96K  /  7 Page

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    BUK455-200 BUK455-200A BUK455-B200B BUK455-200B BUK455

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK455-200 BUK455-200A BUK455-B200B BUK455-200B BUK455
OCR Text powermos transistor BUK455-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/D...
Description powermos transistor

File Size 69.53K  /  7 Page

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    BUK102-50G BUK102-50GS

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK102-50G BUK102-50GS
OCR Text powermos transistor TOPFET DESCRIPTION Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications. BUK102-50GS QUICK REF...
Description    powermos transistor TOPFET

File Size 109.08K  /  11 Page

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    PHP4N60E PHB4N60E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHP4N60E PHB4N60E
OCR Text powermos transistors Avalanche energy rated FEATURES * Repetitive Avalanche Rated * Fast switching * Stable off-state characteristics * High thermal cycling performance * Low thermal resistance PHP4N60E, PHB4N60E SYMBOL d QUICK ...
Description powermos transistors Avalanche energy rated

File Size 80.06K  /  9 Page

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For powermos Found Datasheets File :: 317    Search Time::1.047ms    
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