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  powermos Datasheet PDF File

For powermos Found Datasheets File :: 361    Search Time::2.25ms    
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    PHX4N60E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHX4N60E
OCR Text powermos transistors Avalanche energy rated FEATURES * Repetitive Avalanche Rated * Fast switching * Stable off-state characteristics * High thermal cycling performance * Isolated package PHX4N60E SYMBOL d QUICK REFERENCE DATA V...
Description powermos transistors Avalanche energy rated

File Size 75.37K  /  8 Page

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    Philips
Part No. PNP3055E
OCR Text powermos transistor php3055e general description quick reference data n-channel enhancement mode symbol parameter max. unit field-effect power transistor in a plastic envelope featuring high v ds drain-source voltage 60 v avalanche energy ...
Description powermos transistor. Drain-source voltage 60 V. Drain current(DC) 12 A.

File Size 66.23K  /  7 Page

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    BUK562-60A

NXP Semiconductors
Philips Semiconductors
Part No. BUK562-60A
OCR Text powermos transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in Switched Mode Po...
Description powermos TRANSISTOR LOGIC LEVEL FET

File Size 53.66K  /  7 Page

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    PHILIPS[Philips Semiconductors]
Part No. BUK563-100A
OCR Text powermos transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in Switched Mode Po...
Description powermos transistor Logic level FET

File Size 74.43K  /  7 Page

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    BUK563-48C

NXP Semiconductors N.V.
Philips Semiconductors
Part No. BUK563-48C
OCR Text powermos transistor Voltage clamped logic level FET GENERAL DESCRIPTION Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended f...
Description powermos transistor Voltage clamped logic level FET 21 A, 30 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 67.54K  /  8 Page

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    BUK563-60A

NXP Semiconductors N.V.
Philips Semiconductors
Part No. BUK563-60A
OCR Text powermos transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and g...
Description powermos transistor Logic level FET 21 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 48.89K  /  8 Page

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    BUK565-60H

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK565-60H
OCR Text powermos transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and g...
Description powermos TRANSISTOR LOGIC LEVEL FET

File Size 68.27K  /  8 Page

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    BUK566-60A

NXP Semiconductors
Philips Semiconductors
Part No. BUK566-60A
OCR Text powermos transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in Switched Mode Po...
Description powermos TRANSISTOR LOGIC LEVEL FET

File Size 52.24K  /  7 Page

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For powermos Found Datasheets File :: 361    Search Time::2.25ms    
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