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				Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	TLP250
OCR Text	...ts. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply ...
Description	TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE
File Size	149.25K / 8 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TLP351
OCR Text	...ts. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply ...
Description	Photocoupler GaA .As IRED Photo IC TOSHIBA Photocoupler GaAAs IRED Photo IC
File Size	158.55K / 8 Page	View it Online	Download Datasheet

				http:// FAIRCHILD[Fairchild Semiconductor] INTERSIL[Intersil Corporation] Fairchild Semiconductor Corporation
Part No.	HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723
OCR Text	...OS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input im...IGBT is ideal for many high voltage switching applications operating at moderate frequencies where l...
Description	40A/ 600V/ UFS Series N-Channel IGBTs 40A, 600V, UFS Series N-Channel IGBTs From old datasheet system XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN 40 A, 600 V, N-CHANNEL IGBT
File Size	137.79K / 6 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	HGT1S20N60C3R HGT1S20N60C3RS HGTG20N60C3R HGTP20N60C3R
OCR Text	...e switching applications. These devices demonstrate RUGGED performance capability when subjected to harsh SHORT CIRCUIT WITHSTAND TIME (SCWT...IGBT under test. Formerly Developmental Type TA49047. January 1997 Features * 40A, 600V TJ = ...
Description	40A/ 600V/ Rugged UFS Series N-Channel IGBTs 40A, 600V, Rugged UFS Series N-Channel IGBTs
File Size	107.60K / 6 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
Part No.	HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A
OCR Text	...OS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input im...IGBT is ideal for many high voltage switching applications operating at moderate frequencies where l...
Description	45 A, 600 V, UFS N-Channel IGBT Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 45 A, 600 V, N-CHANNEL IGBT, TO-263AB 45A, 600V, UFS Series N-Channel IGBT 5A00V的，的ufs系列N沟道IGBT
File Size	141.01K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	HGT4E20N60A4DS HGTG20N60A4D HGTG20N60A4
OCR Text	...OS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impe...IGBT used is the development type TA49339. The diode used in anti-parallel is the development type T...
Description	CONNECTOR ACCESSORY 70 A, 600 V, N-CHANNEL IGBT, TO-268AA 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	162.96K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTG20N60A4 HGTP20N60A4
OCR Text	...OS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input im...IGBT is ideal for many high voltage switching applications operating at high frequencies where low c...
Description	600V, SMPS Series N-Channel IGBTs
File Size	137.64K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTG20N60C3D
OCR Text	...ent equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Lo...IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10 L = 1mH Test Circuit (Fig...
Description	3.3V 36-mc CPLD 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	120.19K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc]
Part No.	MC33153 MC33153D MC33153P MC33153_D ON0974
OCR Text	...d undervoltage detection. These devices are available in dual-in-line and surface mount packages and include the following features: MC33153 SINGLE IGBT GATE DRIVER SEMICONDUCTOR TECHNICAL DATA * * * * * * * High Current Output S...
Description	From old datasheet system SINGLE IGBT GATE DRIVER
File Size	188.48K / 12 Page	View it Online	Download Datasheet

For devices-igbt-igbt Found Datasheets File :: 5681 Search Time::2.031ms
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