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  30a Datasheet PDF File

For 30a Found Datasheets File :: 9915    Search Time::1.125ms    
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    HUR30100 HUR30120

Sirectifier Semiconductors
Part No. HUR30100 HUR30120
OCR Text .../us; t vj =100 o c 5.5 a i f =30a; t vj =150 o c t vj =25 o c 1.78 2.74 v v f 0.25 40 high-p erf ormance wide t emperature rang e ultra f ast reco ver y epitaxial diode 11.4 hur30100, hur30120 high-p erf ormance wide...
Description High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

File Size 244.60K  /  3 Page

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    SR12 SR12.TC SR12.TCT

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Semtech Corporation
Part No. SR12 SR12.TC SR12.TCT
OCR Text ...ent reaches a peak amplitude of 30a in 1ns for a level 4 ESD contact discharge per IEC 1000-4-2. Therefore, the voltage overshoot due to 1nH of series inductance is: V = LP diESD/dt = 1X10-9 (30 / 1X10-9) = 30V Example: Consider a VCC = 5V,...
Description RailClamp? Low Capacitance TVS Diode Array
RailClamp庐 Low Capacitance TVS Diode Array
RailClamp㈢ Low Capacitance TVS Diode Array

File Size 176.36K  /  8 Page

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    IRFU3505 IRFR3505

IRF[International Rectifier]
Part No. IRFU3505 IRFR3505
OCR Text ... G S RDS(on) = 0.013 ID = 30a Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional...
Description AUTOMOTIVE MOSFET

File Size 580.87K  /  11 Page

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    LT3905

Linear Technology
Part No. LT3905
OCR Text ...mon) current gain 3a i apd 30a, 12v monin 65v 30a i apd 3ma, 12v monin 65v l l 0.092 0.096 0.10 0.10 0.108 0.104 apd current limit monitor (ilim_mon) current gain 30a i apd 300a, 12v monin 65v 300a i apd 3ma, 12v...
Description Boost DC/DC Converter with APD Current Monitor

File Size 229.82K  /  16 Page

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    STTH6002CPI STTH6002CW STTH6002C06

STMicroelectronics
Part No. STTH6002CPI STTH6002CW STTH6002C06
OCR Text ...F/dt(A/s) Tj=25 C Tj=125 C IF= 30a VR=160V 10 0 10 100 dIF/dt(A/s) 1000 Figure 7. Peak reverse recovery current versus dIF/dt (typical values) Figure 8. Dynamic parameters versus junction temperature IRM(A) 16 14 12 1...
Description 30 A, 200 V, SILICON, RECTIFIER DIODE
High efficiency ultrafast diode

File Size 91.36K  /  9 Page

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    STK85007 STK850

STMicroelectronics
Part No. STK85007 STK850
OCR Text 30a - PolarPAK(R) STripFETTM Power MOSFET Features Type STK850 VDSS 30V RDS(on) <0.0029 RDS(on)*Qg 71nC*m PTOT 5.2W Ultra low top and bottom junction to case thermal resistance Very low capacitances 100% Rg tested Fu...
Description N-channel 30V - 0.0024Ω - 30a - PolarPAK? STripFET Power MOSFET
nullN-channel 30V - 0.0024ヘ - 30a - PolarPAK㈢ STripFET⑩ Power MOSFET

File Size 407.55K  /  16 Page

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    AP73T03GJ-HF14 AP73T03GH-HF14 AP73T03GH-HF AP73T03GJ-HF

Advanced Power Electronics Corp.
Part No. AP73T03GJ-HF14 AP73T03GH-HF14 AP73T03GH-HF AP73T03GJ-HF
OCR Text ...=250ua 30 - - v v gs =10v, i d =30a - - 9 m v gs =4.5v, i d =20a - - 16 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =30a - 42 - s i dss drain-source leakage current v ds =...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 94.84K  /  4 Page

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    TPSPX401403 PX401/403-U3A PX401/403-U3B PX401/403-U4C PX401/403-U4E PX401/403-U4H PX401/403-U4M PX401/403-U4D PX401/403-

C&D Technologies
Part No. TPSPX401403 PX401/403-U3A PX401/403-U3B PX401/403-U4C PX401/403-U4E PX401/403-U4H PX401/403-U4M PX401/403-U4D PX401/403-U4F PX401/403-U4I PX401/403-U4J PX401/403-U4N PX401/403-U4G PX401/403-U4K PX401/403-U4L PX401/403-U4P PX401/403-U4R PX401/403-U4S
OCR Text ...50A 50A 50A 50A 50A 50A 20A 25A 30a 30a 70A 30a 20A 20A MODEL NUMBER PX401/403-U3A PX401/403-U3B PX401/403-U4C PX401/403-U4D PX401/403-U4E PX401/403-U4F PX401/403-U4G PX401/403-U4H PX401/403-U4I PX401/403-U4J PX401/403-U4K PX401/403-U4L...
Description AC/DC Power Supply

File Size 91.21K  /  4 Page

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    K6X8008C2B-TQ55 DSK6X8008C2B K6X8008C2B K6X8008C2B-B K6X8008C2B-F K6X8008C2B-Q K6X8008C2B-TB55 K6X8008C2B-TB70 K6X8008C2

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Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K6X8008C2B-TQ55 DSK6X8008C2B K6X8008C2B K6X8008C2B-B K6X8008C2B-F K6X8008C2B-Q K6X8008C2B-TB55 K6X8008C2B-TB70 K6X8008C2B-TF55 K6X8008C2B-TF70 K6X8008C2B-TQ70 DS_K6X8008C2B
OCR Text ... - Changed IDR(Commercial) from 30a to 15A - Changed IDR(industrial) from 30a to 15A - Changed IDR(Automotive) from 40A to 30a Draft Date October 31, 2002 December 11, 2002 Remark Preliminary Preliminary 1.0 September 16, 2003...
Description 1Mx8 bit Low Power and Low Voltage CMOS Static RAM 1Mx8位低功耗和低电压的CMOS静态RAM

File Size 129.87K  /  9 Page

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    PM30CTJ060-3

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. PM30CTJ060-3
OCR Text 30a Current-sense 6kHz IGBT type inverter Built in IGBT gate drive circuit Built in Faule OC, SC, OT & UV protection Fault output 2.2kW class inverter application APPLICATION Air conditioner, mortor control OUTLINE DRAWING Dimensio...
Description MITSUBISHI INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE

File Size 132.77K  /  6 Page

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