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  30a Datasheet PDF File

For 30a Found Datasheets File :: 9817    Search Time::0.953ms    
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    AP30N30WI

Advanced Power Electronics Corp.
Part No. AP30N30WI
OCR Text ... lower on-resistance i d 30a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i dm a p d @t c =25 w w/ e as single pulse avalanche energy 3 mj i ar avalanche current a t stg t j ...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 110.19K  /  4 Page

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    30ETH06 30ETH06-1 30ETH06S

IRF[International Rectifier]
Part No. 30ETH06 30ETH06-1 30ETH06S
OCR Text ... V V V A A pF nH IR = 100A IF = 30a, TJ = 25C IF = 30a, TJ = 150C VR = VR Rated TJ = 150C, VR = VR Rated VR = 600V Measured lead to lead 5mm from package body 1.34 1.75 0.3 60 33 8.0 50 500 - IR Reverse Leakage Current - CT L...
Description    Hyperfast Rectifier
600V 30a HyperFast Discrete Diode in a TO-220AC package
600V 30a HyperFast Discrete Diode in a TO-262 package
600V 30a HyperFast Discrete Diode in a D2-Pak (UltraFast) package

File Size 205.98K  /  8 Page

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    AUIR3317 AUIR3317S AUIR3317STRL AUIR3317STRR

International Rectifier
Part No. AUIR3317 AUIR3317S AUIR3317STRL AUIR3317STRR
OCR Text ...0 15 m ? vcc-vin=-14v, iout=30a static electrical characteristics tj=-40..150c, vcc=6..26v (unless otherwise specified) symbol parameter min. typ. max. units test conditions vcc op. operating voltage range 6 ? 26 v i...
Description LOW EMI CURRENT SENSE HIGH SIDE SWITCH

File Size 268.92K  /  16 Page

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    CPU165MK

IRF[International Rectifier]
Part No. CPU165MK
OCR Text ... 0V, IC = 1.0mA -- 2.1 2.7 IC = 30a V GE = 15V -- 2.6 -- V IC = 52A -- 2.3 -- IC = 30a, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -14 -- mV/C VCE = VGE, IC = 250A 9.8 17 -- S VCE = 100V, I C = 30a -- -- 250 A VGE = 0V, V CE = 600V -- --...
Description IGBT SIP MODULE Short Circuit Rated UltraFast IGBT

File Size 76.58K  /  2 Page

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    AP4439GH-HF

Advanced Power Electronics Corp.
Part No. AP4439GH-HF
OCR Text ...-resistance 2 v gs =-10v, i d =-30a - - 10 m ? v gs =-4.5v, i d =-20a - - 17 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-30a - 55 - s i dss drain-source leakage curr...
Description Low On-resistance, Simple Drive Requirement

File Size 90.45K  /  4 Page

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    V23990-P546-X3X-D3-19

Vincotech
Part No. V23990-P546-X3X-D3-19
OCR Text 30a v geon 15 v v geoff 0 v r gon 8 r goff 4 figure 1 i gbt figure 2 fwd typical average static loss as a function of output current typical average static loss as a function of output current p loss = f(i out ) p loss = f(i out ) ...
Description Output Inverter Application

File Size 49.25K  /  3 Page

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    FAIRCHILD SEMICONDUCTOR CORP
Part No. AF60UA60DN
OCR Text .... typ. max. units v fm 1 i f = 30a i f = 30a t c = 25 o c t c = 125 o c - - - - 2.2 2.0 v i rm 1 v r = 600v v r = 600v t c = 25 o c t c = 125 o c - - - - 100 150 a t rr i rr q rr i f = 30a, di/dt = 200a/ s t c = 25 o c - - ...
Description 30 A, 600 V, SILICON, RECTIFIER DIODE

File Size 304.78K  /  5 Page

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    MTN60NF06LJ3

Cystech Electonics Corp.
Part No. MTN60NF06LJ3
OCR Text ... 60a r ds(on) @v gs =10v, i d =30a 10m (typ) r ds(on) @v gs =4.5v, i d =20a 12m (typ) features ? simple drive requirement ? repetitive avalanche rated ? fast switching characteristic ? rohs compliant package & halogen-fre...
Description N-Channel Enhancement Mode Power MOSFET

File Size 255.88K  /  9 Page

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    IXTN60N50L2

IXYS Corporation
Part No. IXTN60N50L2
OCR Text ... ma r ds(on) v gs = 10v, i d = 30a note 1 100 m linear l2 tm power mosfet n-channel enhancement mode extended fbsoa ixtn60n50l2 v dss = 500v i d25 = 53a r ds(on) 100m ds100086(12/08) features ?...
Description N-Channel Enhancement Mode

File Size 125.03K  /  5 Page

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    STD60NF06 STD60NF06T4 CD00003115 D60NF06

ST Microelectronics
STMicroelectronics
Part No. STD60NF06 STD60NF06T4 CD00003115 D60NF06
OCR Text ... resistance v gs = 10v, i d = 30a 0.014 0.016 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. forward transconductance v ds = 15v, i d = 30a 20 s c ...
Description STD60NF06
N-channel 60V - 0.014ohm - 60A - DPAK STripFET II Power MOSFET

File Size 387.85K  /  13 Page

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