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  2.0 45.0a Datasheet PDF File

For 2.0 45.0a Found Datasheets File :: 13178    Search Time::2.109ms    
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    HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4

FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4
OCR Text ...ting Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA Single Pulse Avalanche Energy at TC = 25oC . ...0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description 600V, SMPS Series N-Channel IGBT 34 A, 600 V, N-CHANNEL IGBT, TO-263AB
600V/ SMPS Series N-Channel IGBT
600V SMPS Series N-Channel IGBT

File Size 153.85K  /  8 Page

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    HGT1S7N60A4S HGTD7N60A4S HGTP7N60A4 HGTG7N60A4 FN4826

INTERSIL[Intersil Corporation]
Part No. HGT1S7N60A4S HGTD7N60A4S HGTP7N60A4 HGTG7N60A4 FN4826
OCR Text 2 600V, SMPS Series N-Channel IGBT The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices...0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description From old datasheet system
600V SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBT
600V/ SMPS Series N-Channel IGBT

File Size 166.85K  /  11 Page

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    IR2184 IR21844 IR21844S IR2184S

IRF[International Rectifier]
Part No. IR2184 IR21844 IR21844S IR2184S
OCR Text ... DT97-3 for more details). Note 2: IN and SD are internally clamped with a 5.2V zener diode. 2 www.irf.com IR2184(4) (S) Dynamic E...0 0 40 20 400 5 0 0 Max. Units Test Conditions 900 400 270 90 40 60 35 520 6 50 600 sec nsec VS ...
Description HALF-BRIDGE DRIVER

File Size 180.90K  /  8 Page

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    IRF7204 IRF7204TR

International Rectifier
Part No. IRF7204 IRF7204TR
OCR Text ... S S S G 1 8 7 A D D D D 2 VDSS = -20V RDS(on) = 0.060 ID = -5.3A 3 6 4 5 To p V ie w Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible o...
Description TRI N PLUG M 0-48 NO SEAL
Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A)
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 141.26K  /  9 Page

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    IRF7205 IRF7205PBF IRF7205TR

IRF[International Rectifier]
Part No. IRF7205 IRF7205PBF IRF7205TR
OCR Text ... S S S G 1 8 7 A D D D D 2 VDSS = -30V RDS(on) = 0.070 ID = -4.6A 3 6 4 5 T o p View Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on...
Description -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 162.31K  /  9 Page

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    IRF7303 IRF7303TR

International Rectifier
http://
Part No. IRF7303 IRF7303TR
OCR Text ...G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = 30V 3 6 4 5 RDS(on) = 0.050 Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resist...
Description Generation V Technology
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)

File Size 107.34K  /  9 Page

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    IRF7306 IRF7306TR IRF7306TRPBF

International Rectifier
Part No. IRF7306 IRF7306TR IRF7306TRPBF
OCR Text ... G2 1 8 D1 D1 D2 D2 2 7 VDSS = -30V 3 6 4 5 RDS(on) = 0.10 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resis...
Description Generation V Technology
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 109.78K  /  9 Page

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    IRF7311

IRF[International Rectifier]
Part No. IRF7311
OCR Text ...2 1 8 7 D1 D1 D2 D2 2 VDSS = 20V 3 6 4 5 RDS(on) = 0.029 T o p V ie w Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-...
Description HEXFET Power MOSFET

File Size 154.76K  /  7 Page

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    IRF7313 IRF7313TR

IRF[International Rectifier]
Part No. IRF7313 IRF7313TR
OCR Text ... S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = 30V RDS(on) = 0.029 3 6 4 5 Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon...
Description 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 542.53K  /  7 Page

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    IRF7316

IRF[International Rectifier]
Part No. IRF7316
OCR Text ...R) Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -30V RDS(on) = 0.058 6 5 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silico...
Description HEXFET POWER MOSFET

File Size 235.36K  /  7 Page

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For 2.0 45.0a Found Datasheets File :: 13178    Search Time::2.109ms    
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