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ACT5260 HT93LC66 203002G 1N3600 UDN3625M PMIR4 R1131 1M120ZS5
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  2.0 45.0a Datasheet PDF File

For 2.0 45.0a Found Datasheets File :: 13190    Search Time::2.562ms    
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    ZXMC3AM832 ZXMC3AM832TA ZXMC3AM832TC

ZETEX[Zetex Semiconductors]
Part No. ZXMC3AM832 ZXMC3AM832TA ZXMC3AM832TC
OCR Text ...S = -30V; RDS(ON) = 0.21 ; ID= -2.7A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure combining the benefits of Low on-resistance with ...
Description MPPS Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
MPPS⑩ Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET

File Size 276.58K  /  10 Page

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    ZXMN3A01E6 ZXMN3A01E6TA ZXMN3A01E6TC ZXMN3A01

ZETEX[Zetex Semiconductors]
Part No. ZXMN3A01E6 ZXMN3A01E6TA ZXMN3A01E6TC ZXMN3A01
OCR Text ...L V DSS V GS ID LIMIT 30 20 3.0 2.4 2.4 10 2.4 10 1.1 8.8 1.7 13.6 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA...
Description 30V N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 1,074.58K  /  7 Page

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    ZXMN3A01 ZXMN3A01F ZXMN3A01FTA ZXMN3A01FTC

ZETEX[Zetex Semiconductors]
Part No. ZXMN3A01 ZXMN3A01F ZXMN3A01FTA ZXMN3A01FTC
OCR Text 2.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resis...0 1.64 1.81 8 1.3 8 625 5 806 6.4 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A W...
Description RECTIFIER FAST-RECOVERY SINGLE 1A 200V 35A-ifsm 0.875V-vf 25ns 2uA-ir DO-41 5K/REEL-13
30V N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 1,105.36K  /  7 Page

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    ZXMN3A02N8 ZXMN3A02N8TA ZXMN3A02N8TC

ZETEX[Zetex Semiconductors]
Part No. ZXMN3A02N8 ZXMN3A02N8TA ZXMN3A02N8TC
OCR Text ...V DSS V GS ID LIMIT 30 20 9.0 7.2 7.3 44 3.2 44 1.56 12.5 2.5 20 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R...
Description 30V N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 158.92K  /  7 Page

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    ZXMN6A07Z ZXMN6A07ZTA

ZETEX[Zetex Semiconductors]
Part No. ZXMN6A07Z ZXMN6A07ZTA
OCR Text ...GS ID LIMIT 60 20 1.9 1.5 1.4 6 2.4 6 1.5 12 2.6 21 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A W mW/C W mW/C C THER...0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to transient The...
Description 60V N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 1,009.04K  /  7 Page

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    ZXMN6A08E6 ZXMN6A08E6TA ZXMN6A08E6TC

ZETEX[Zetex Semiconductors]
Part No. ZXMN6A08E6 ZXMN6A08E6TA ZXMN6A08E6TC
OCR Text ...L V DSS V GS ID LIMIT 60 20 3.0 2.4 2.4 4.0 2.6 6.4 1.1 8.8 1.7 13.6 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R ...
Description Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:99; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
60V N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 848.66K  /  7 Page

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    ZXT10P40DE6 ZXT10P40DE6TA ZXT10P40DE6TC

Diodes Incorporated
ZETEX[Zetex Semiconductors]
Part No. ZXT10P40DE6 ZXT10P40DE6TA ZXT10P40DE6TC
OCR Text ...e hFE characterised up to 3A IC=2.0A Continuous Collector Current SOT23-6 package SOT23-6 APPLICATIONS DC - DC Converters Power Manage...0.95 -0.85 300 300 180 60 12 150 480 450 290 130 22 190 19 40 435 25 MHz pF ns ns MIN. -40 -40 -5 TY...
Description Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
PNP Low Sat Transistor

File Size 228.14K  /  6 Page

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    3EZ150 3EZ180 3EZ160 3EZ82 3EZ51 3EZ100 3EZ11 3EZ110 3EZ12 3EZ120 3EZ130 3EZ14 3EZ140 3EZ15 3EZ16 3EZ17 3EZ170 3EZ18 3EZ

PANJIT[Pan Jit International Inc.]
PanJit International Inc.
http://
Pan Jit International I...
Part No. 3EZ150 3EZ180 3EZ160 3EZ82 3EZ51 3EZ100 3EZ11 3EZ110 3EZ12 3EZ120 3EZ130 3EZ14 3EZ140 3EZ15 3EZ16 3EZ17 3EZ170 3EZ18 3EZ19 3EZ190 3EZ20 3EZ200 3EZ22 3EZ24 3EZ27 3EZ28 3EZ30 3EZ33 3EZ36 3EZ39 3EZ43 3EZ47 3EZ56 3EZ62 3EZ68 3EZ75 3EZ91 3EZ13
OCR Text ...ce, 0.04 gram .140(3.6) .104(2.6) MAXIMUM5RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified. SYMBOLS Pwak Pulse Power Dissipation on TA=50C (Notes A) Derate above 70C Peak Forwar...
Description surface mount silicon Zener diodes
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts)

File Size 458.82K  /  4 Page

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    AME8817AEDZ150 AME8817AEDZ180 AME8817AEDZ250 AME8817BEDZADJ AME8817AEDZ500 AME8817 AME8817AEDZ330 AME8817AEDZ475

Rohm Co., Ltd.
AME, Inc.
AME[Analog Microelectronics]
Part No. AME8817AEDZ150 AME8817AEDZ180 AME8817AEDZ250 AME8817BEDZADJ AME8817AEDZ500 AME8817 AME8817AEDZ330 AME8817AEDZ475
OCR Text ...7AEDZXXX AME8817BEDZXXX 1 2 3 4 5 6 7 1. 2. 3. 4. EN PG VIN GND 5. VOUT 6. VOUT 7. BYP 1 2 3 4 5 6 7 1. 2....0.3 to VIN + 0.3 B n Recommended operating Conditions: Parameter Ambient Temperature Range Junct...
Description 1.5A CMOS LDO 1.5A的CMOS低压

File Size 74.85K  /  10 Page

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    HGT1S7N60A4DS HGTG7N60A4D HGTP7N60A4D

FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S7N60A4DS HGTG7N60A4D HGTP7N60A4D
OCR Text ...ting Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . ...0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600 V, SMPS N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 140.21K  /  9 Page

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