jiangsu changjiang elec tronics technology co., ltd to-220 -3l plastic-encapsulate mosfets CJP08N65 n-channel pow e r mosfet general description this advanced high voltage mosfet is designed to stand high energy in the avalanche mode an d switch efficiently. this new high energy device also offers a drain-to-source diode fast recovery time. desighed for high voltage, high speed switching applications such as power supp lies, converters, power motor controls and bridge circuits. feature ? high current rating ? lower r ds(on) ? lower cap acitance ? lower t otal gate charge ? tighter v sd specifications ? avalanche energ y specified maximum ratings (t a =25 unless other w ise noted) paramete r symbol v alue unit drain-sourc e voltage v ds 650 gate-source vo ltag e v gs 30 v continuo us dr ain current i d 8 pulsed drai n current i dm 32 a single puls ed avalanche energy (note1) e as 2 5 0 mj thermal resist ance from jun ction to ambient r ja 62.5 /w operating an d storage t emperature range t j, t stg -55 ~ + 150 maximum le a d temperature for soldering purposes , duration for 5 s econds t l 260 www.cj-elec.com 1 c , apr ,201 6 ma rking equivalent circuit cj p0 8 n65 = device code solid dot = green molding compound device, xxx if none, the normal device =date code to -220- 3l 1. ga t e 2. drain 3. source 1 3 2 v (br) dss r ds(on) max i d ? 6 5 0v 8 a 1 .4 @ 10v ? g d s xxx CJP08N65
parameter symbol test condition min typ max unit off character istics drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 650 drain-source diode forward voltage v sd v gs = 0v, i s =8a 1.4 v zero gate volt age drain current i dss v ds =650v, v gs =0v 10 a gate-body leak age current i gss v ds =0v, v gs = 30v 100 na on characteri stics (note2) gate-threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 3.5 4.0 v static drain-source on-r esistance r ds( on) v gs =10v, i d =4a 1.1 1.4 ? for ward transconductance g fs v ds =50v, i d =3.9a 8.5 s dyn amic characteristics (note 3) input capacitan ce c iss 1255 output capacitance c oss 135 reverse transfer capacitanc e c rss v ds =25v,v gs =0v,f =1 mhz 16 pf switch ing characteristics (note 3) total gate char ge q g 28 36 gate-source charge q gs 4.5 gate-drain charge q gd v ds =520v,v gs =10v,i d =8a 12 nc turn-on dela y time t d (on) 45 turn-on rise time t r 130 turn-off delay time t d(of f) 170 turn-off fall time t f v dd =325v, r g =25 ? , i d =8a 140 ns notes : 1. l=7mh, i l =8a, v dd =50v, r g =25 ? , st arting t j =25 . 2. pulse t est: pulse width 300s, duty cycle 2%. 3. these parameters have no way to verify. www.cj-elec.com 2 c,apr,2016 mosfet electrical characteristics a t =25 unless otherwise specified
01234567 0 2 4 6 8 25 50 75 100 125 0 1 2 3 4 5 0.0 0 .2 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 10 246 8 1 01 2 0 1 2 3 4 5 6 7 8 024 68 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 02 0 3 04 0 0 2 4 6 8 v ds =50v pulsed drain current i d (a) gate to source voltage v gs (v) t r ansfer characteristics t a =100 t a =25 i d =250ua t hr eshold voltage t hresho ld voltage v th (v) junction tem perature t j ( ) puls ed source current i s (a) source to drain voltage v sd (v) v sd i s ? ? t a =100 t a =25 puls ed i d =4a r ds(o n) v gs on -resistance r ds ( on) ( ) gate to source voltage v gs (v) t a =100 t a =25 t a =25 puls ed o n -resistance r ds ( on) ( ) drain current i d (a) i d ?? r ds(o n) v gs =10v pulsed v gs =5.5v o u tput characteristics drain current i d (a) drain to source voltage v ds (v) v gs = 6v 8v 10v v gs =5v v gs =4.5v 7 \ s l f d o & k d u d f w h u l v w l f v www.cj-elec.com 3 c,apr,2016
to-220-3l package outline dimensions min max min max a 4.470 4.670 0.176 0.184 a1 2.520 2.820 0.099 0.111 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 d 10.010 10.310 0.394 0.406 e 8.500 8.900 0.335 0.350 e1 12.060 12.460 0.475 0.491 e e1 4.980 5.180 0.196 0.204 f 2.590 2.890 0.102 0.114 h 0.000 0.300 0.000 0.012 l 13.400 13.800 0.528 0.543 l1 3.560 3.960 0.140 0.156 3.735 3.935 0.147 0.155 symbol dimensions in millimeters dimensions in inches 0.100 typ 2.540 typ www.cj-elec.com 4 c,apr,2016
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