| PART |
Description |
Maker |
| RJK60S5DPP-E0-T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJL60S5DPP-E0 RJL60S5DPP-E0T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| IRG4BC40U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
|
International Rectifier
|
| IRAMX20UP6 IRAMX20UP60A |
20A, 600V with open Emitter Pins 20A00V的开放式发射器针
20A 600V with open Emitter Pins
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 6MBI20F-060 |
IGBT(600V 20A)
|
Fuji Electric
|
| S20WB60 |
Bridge Diode(600V 20A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| AOT20C60P |
600V,20A N-Channel MOSFET
|
Alpha & Omega Semicondu...
|
| 6MBP20RH060 |
IGBT-IPM(600V/20A)
|
http://
FUJI[Fuji Electric]
|
| R6020ENZ1 |
Nch 600V 20A Power MOSFET
|
Rohm
|
| FCA20N60F |
N-Channel SuperFETFRFETMOSFET 600V, 20A, 190m
|
Fairchild Semiconductor
|
| SF20A600HPI |
600V, 20A ULTRAFAST DUAL RECTIFIERS
|
KODENSHI KOREA CORP.
|
