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  600v Datasheet PDF File

For 600v Found Datasheets File :: 16258    Search Time::1.75ms    
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    Tiger Electronic Co.,Ltd
Part No. C106M-600v
OCR Text parameter symbol max unit repetitive peak off-state voltages v drm v rrm 600 v average on-state current i t(av) 2.5 a rms on-state current i t(rms) 4.0 a non-repetitive peak on-state current i tsm 38 a max. operating junction temperature...
Description Thyristors logic level

File Size 25.54K  /  1 Page

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    APTGT50X60T3G

Microsemi Corporation
Part No. APTGT50X60T3G
OCR Text ...32 31 10 19 2 25 4 v ces = 600v i c = 50a* @ tc = 80c application ? motor control features ? trench + field stop igbt ? technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft...
Description 3 Phase bridge Trench Field Stop IGBT? Power Module

File Size 266.80K  /  5 Page

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    IDC05S60CE

Infineon Technologies AG
Part No. IDC05S60CE
OCR Text ... die size package idc05s60ce 600v 5a 1.45 x 1.162 mm 2 sawn on foil mechanical parameter raster size 1.45x 1.162 anode pad size 1.213 x 0.925 area total 1.68 mm 2 thickness 355 m wafer size 100 mm max. possible ...
Description 2nd generation thinQ!TM SiC Schottky Diode

File Size 102.30K  /  4 Page

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    IDC08S60CE

Infineon Technologies AG
Part No. IDC08S60CE
OCR Text ... die size package idc08s60ce 600v 8a 1.658 x 1.52 mm 2 sawn on foil mechanical parameter raster size 1.658x 1.52 anode pad size 1.421 x 1.283 area total 2.52 mm 2 thickness 355 m wafer size 100 mm max. possible chi...
Description 2nd generation thinQ!TM SiC Schottky Diode

File Size 101.50K  /  4 Page

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    TY Semiconductor Co., Ltd
Part No. AOK20B135D1
OCR Text ... tube 240 turn off soa, v ce 600v, limited by t jmax pulsed collector current, limited by t jmax maximum diode junction-to-case c/w 0.44 maximum igbt junction-to-case maximum junction-to-ambient t c =100c maximum lead temperature for sol...
Description Latest AlphaIGBT (a IGBT) technology

File Size 911.74K  /  8 Page

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    AUIRG4BC30S-S AUIRG4BC30S-SL

International Rectifier
Part No. AUIRG4BC30S-S AUIRG4BC30S-SL
OCR Text ... replacements benefits v ces = 600v v ce(on) typ. = 1.4v @v ge = 15v, i c = 18a 12/03/10 www.irf.com 1 d 2 pak auirg4bc30s-s automotive grade absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cau...
Description INSULATED GATE BIPOLAR TRANSISTOR

File Size 301.87K  /  13 Page

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    MICROSEMI POWER PRODUCTS GROUP
Part No. APT6010B2LLG
OCR Text ...b2ll lll apt6010b2ll apt6010lll 600v 54a 0.100 ? ? ? ? ? ? lower input capacitance ? increased power dissipation ? lower miller capacitance ? easier to drive ? lower gate charge, qg ? popular t-max? or to-264 package power mos 7 ? is a...
Description 54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 160.55K  /  5 Page

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    SL
Part No. SVF2N60F SVF2N60D SVF2N60T
OCR Text 600v n-channel mosfet general description svf2n60m/f/t/d is an n-channel enhancement mode power mos field effect transistor which is produced using silan proprietary f-cell tm structure dmos technology. the improved planar stripe cel...
Description 600v N-CHANNEL MOSFET

File Size 591.29K  /  10 Page

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    S6010DS2RP

Littelfuse
Part No. S6010DS2RP
OCR Text ... t j = 100c 400v min. 350 v/s 600v 300 800v 250 1000v 100 v d = v drm ; gate open; t j = 125c 400v 250 600v 225 800v 200 v gd v d = v drm ; r l = 3.3 k ; t j = 125c min. 0.2 v i h i t = 200ma (initial) max. 30 ma t q (1) max. 3...
Description Teccor? brand Thyristors 10 Amp Sensitive & Standard SCRs

File Size 971.73K  /  11 Page

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