| PART |
Description |
Maker |
| SIDC07D60F6 SIDC07D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching
|
Infineon Technologies AG
|
| 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G |
Fast Recovery Pack: DO-41
GLASS PASSIVATED JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 600V CURRENT: 1.0A
|
Gulf Semiconductor
|
| STGW39NC60VD07 STGW39NC60VD |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH⑩ IGBT
|
STMicroelectronics
|
| BYW76GP BYW73GP BYW74GP BYW72GP BYW75GP |
Fast Recovery Pack: DO-201AD
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:200 TO 600V CURRENT: 3.0A
|
Gulf Semiconductor
|
| UT4N60F |
N-Ch 600V Fast Switching MOSFETs
|
Unitpower
|
| SIDC06D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip
|
Infineon Technologies AG
|
| STGW30NC60W |
N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT
|
STMicroelectronics
|
| STGW40NC6 STGW40NC60WD |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT
Using the latest high voltage technology based on
|
ST
|
| IKB15N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
INFINEON[Infineon Technologies AG]
|
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| FFPF20U60 FFPF20U60S FFPF20U60STU |
20A/600V Ultra Fast Recovery Rectifier
RECTIFIER DIODE,600V V(RRM),TO-220AC
From old datasheet system
ULTRA FAST RECOVERY POWER RECTIFIER
|
FAIRCHILD[Fairchild Semiconductor]
|
