| PART |
Description |
Maker |
| SR280 SR230 |
VOLTAGE 20V ~ 100V 2.0 AMP Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| SR260 SR2100 SR240 SR220 |
VOLTAGE 20V ~ 100V 2.0 AMP Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| SCD3100 SCD3100-15 |
VOLTAGE 100V 3.0 AMP Surface Mount Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnol...
SeCoS Halbleitertechnologie GmbH
|
| 90CLQ100 90CLQ100-15 |
SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 90 Amp, 100V
90A 100V Hi-Rel Schottky Common Cathode Diode in a SMD-1 package
|
International Rectifier
|
| FBR3090 |
30 Amp 90 & 100V SCHOTTKY BARRIER RECTIFIERS 30安培90
|
Bourns, Inc.
|
| COM140T COM440T COM240T COM340T |
500V 7Amp N-channel MOSFET
100V , 14 Amp, N-Channel MOSFET(100V , 14 A，N沟道MOS场效应管)
(COTS) COMMERCIAL OFF-THE-SHELF POWER MOSFETS IN TO-257AA PACKAGE
|
Omnirel
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| TF210S |
Voltage 100V ~ 1000V 2.0 Amp Surface Mount Bridge Rectifiers
|
SeCoS Halbleitertechnol...
|
| IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)
Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A)
CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）\u003d 1.2ohm，身份证\u003d 6.2A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| 2MBI600NT-060 |
CAP CERM 6.8UF 100V Z5U RAD
IGBT(600V 600A)
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| OP07D OP07DN OP07DR-REEL OP07DR-REEL7 OP07DR OP07D |
Ultralow Offset Voltage Operational Amplifier; Package: SOIC 150 MIL; No of Pins: 8; Temperature Range: Industrial OP-AMP, 350 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, PDSO8
150 μV Maximum Offset Voltage Op Amp
150 渭V Maximum Offset Voltage Op Amp
150 レV Maximum Offset Voltage Op Amp
|
Analog Devices, Inc.
|
| 74HC HCMOS 74HCT 74HCU |
: Conductor AWG#18 to #22; Termination Style: Crimping; Current Rating(Amps)(Max.): 5; Contact Mating Area Plating: Palladium; Operating Temperature
Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:100V; Transistor Polarity:N Channel; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):30; Package/Case:R245; Collector Base Voltage:120V
HCMOS family characteristics
|
Philips Semiconductors
NXP Semiconductors
|
