| PART |
Description |
Maker |
| IRGS14C40L IRGB14C40L IRGSL14C40L |
430V Low-Vceon Discrete IGBT in a TO-262 package
430V Low-Vceon Discrete IGBT in a D2-Pak package
430V Low-Vceon Discrete IGBT in a TO-220AB package
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| STL28NF3LL |
N-CHANNEL 30V - 0.0055ohm - 28A PowerFLATLOW GATE CHARGE STripFETMOSFET
N-CHANNEL 30V - 0.0055ohm - 28A PowerFLAT LOW GATE CHARGE STripFET MOSFET
N-CHANNEL 30V - 0.0055ohm - 28A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩ MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| 5962-0420401HPC 5962-0420401HYC 5962-0420401HYA HC |
2.0 Amp Output Current IGBT Gate Drive Optocoupler 2.0安培输出电流IGBT栅极驱动光电耦合
5962-0420401HPC · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420401HYA · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420401HYC · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420401HPA · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
5962-0420401HXA · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5121-300 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5121-200 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5120-300 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5121-100 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5120 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5120-100 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5120-200 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
HCPL-5121 · 2.0 Amp Output Current IGBT Gate Drive Optocoupler
|
Ecliptek, Corp.
HIROSE ELECTRIC Co., Ltd.
DB Lectro, Inc.
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| STL35NF3LL |
N-CHANNEL 30V 0.0055 OHM 35A POWERFLAT LOW GATE CHARGE STRIPFET MOSFET
N-CHANNEL 30V - 0.0055ohm - 35A PowerFLAT LOW GATE CHARGE STripFET MOSFET
N-CHANNEL 30V - 0.0055ohm - 35A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩ MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| BUK854-800A |
Insulated Gate Bipolar Transistor IGBT 12 A, 800 V, N-CHANNEL IGBT, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| IRG4PC50UPBF |
55 A, 600 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
|
International Rectifier
|
| P274807 P5274-01 P3257-50 P2748-40 P2748-41 P2748- |
MCT photoconductive detector
|
Hamamatsu Corporation
|
| IRGSL14C40LPBF IRGS14C40LPBF IRGB14C40LPBF |
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
|
IRF[International Rectifier]
|
| P2750 P2750-06 P2750-08 P3257-30 P3257-31 P3981 P3 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation
0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation
|
Hamamatsu Corporation
|
| GT15M321 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
