| PART |
Description |
Maker |
| ISL9R1560G2 ISL9R1560S3S ISL9R1560P2 ISL9R1560S2 I |
15A, 600V StealthDiode 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-262
15A, 600V Stealth Diode
15A/ 600V Stealth Diode
15A, 600V Stealth⑩ Diode
15A, 600V Stealth Single Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| ISL9R460S3ST ISL9R460S2 ISL9R460P2 ISL9R460S3S |
4A, 600V Stealth Single Diode
4A, 600V Stealth Diode
4A 600V Stealth Diode
4A, 600V Stealth⑩ Diode
4A, 600V StealthDiode
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| CSFMT108-HF |
Halogen Free Super Fast Recovery Rectifiers, V-RRM=600V, V-DC=600V, I-(AV)=1A
|
Comchip Technology
|
| IRG4RC10KD IRG4RC10 IRG4RC10KDTRR |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 5A条一（c）|52AA
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| ISL9R460PF2 ISL9R460PF2NL |
4A, 600V Stealth ™, Diode, TO-220F Package
4A, 600V Stealth Diode
From old datasheet system
4A / 600V Stealth Diode
|
Fairchild Semiconductor
|
| IRG4BC10SD-L IRG4BC10SD-S |
600V DC-1 kHz (Standard) Copack IGBT in a D2-Pak package
600V DC-1 kHz (Standard) Copack IGBT in a TO-262 package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
|
IRF[International Rectifier]
|
| HGT1S7N60B3S HGTP7N60B3 HGT1S7N60B3S9A HGTD7N60B3S |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|7A一（c）|63AB
14A, 600V, UFS Series N-Channel IGBTs
|
Cypress Semiconductor, Corp.
Fairchild Semiconductor
|
| IRG4PC30K IRG4PC30KPBF |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
| IRG4BC40W IRG4BC40W-S |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
|
IRF[International Rectifier]
|
| SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
600V N-Channel B-FET / Substitute of SSI4N60A
600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
