| PART |
Description |
Maker |
| SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V（D-S），Qg，快速开
N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| TVR06J |
Fast Recovery Pack: DO-41
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE: 600V CURRENT: 0.6A
|
Gulf Semiconductor
|
| RGP30J-B RGPB30J |
Fast Recovery Pack: G3
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:600V CURRENT: 3.0A
|
Gulf Semiconductor
|
| STGW30NC60WD STGW30NC60WD07 GW30NC60WD |
STGW30NC60WD
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH IGBT
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH?/a> IGBT
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH垄芒 IGBT
|
STMicroelectronics
|
| UT4N60F |
N-Ch 600V Fast Switching MOSFETs
|
Unitpower
|
| SIDC07D60AF6 SIDC07D60AF610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip
|
Infineon Technologies AG
|
| STGW30NC60W |
N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT
|
STMicroelectronics
|
| STGW30NC60VD GW30NC60VD |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT N沟道40A 600V47非常快速IGBT的开关PowerMESH商标
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| IRG4BC30FD1PBF |
600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode
|
International Rectifier
|
| SPMQ613-01TXV PM0027A PM0027A-15 |
200 A, 600 V, N-CHANNEL IGBT HERMETIC SEALED PACKAGE-7
600V, 200A FAST SWITCHING IGBT HALF BRIDGE
|
Solid State Devices, Inc.
Solid States Devices, Inc
Solid States Devices, I...
|
| FFPF20U60 FFPF20U60S FFPF20U60STU |
20A/600V Ultra Fast Recovery Rectifier
RECTIFIER DIODE,600V V(RRM),TO-220AC
From old datasheet system
ULTRA FAST RECOVERY POWER RECTIFIER
|
FAIRCHILD[Fairchild Semiconductor]
|
