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7MBP75VDA060-50 - IGBT MODULE (V series) 600V / 75A / IPM

7MBP75VDA060-50_4730325.PDF Datasheet


 Full text search : IGBT MODULE (V series) 600V / 75A / IPM


 Related Part Number
PART Description Maker
2MBI400U2B-060 IGBT Module U-Series 600V / 400A 2 in one-package
List of Unclassifed Manufacturers
ETC
7MBP75VDA060-50 IGBT MODULE (V series) 600V / 75A / IPM
Fuji Electric
2MBI400VB-060-50 IGBT MODULE (V series) 600V / 400A / 2 in one package
Fuji Electric
1MBI300U2H-060L-50 IGBT MODULE (U series) 600V / 300A / 1 in one package
Fuji Electric
7MBR30U2A060 IGBT MODULE (U series) 600V / 30A / PIM
FUJI ELECTRIC HOLDINGS CO., LTD.
ETC
HGT1S20N60C3S HGTP20N60C3 HGTG20N60C3 FN4492 45A, 600V, UFS Series N-Channel IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-220AB
From old datasheet system
45A/ 600V/ UFS Series N-Channel IGBT
Intersil, Corp.
http://
INTERSIL[Intersil Corporation]
FGB30N6S2D FGH30N6S2D FGP30N6S2D FGB30N6S2DT Switch Mode Power Supply; Output Power:198W; No. of Outputs:1; Output 1 VDC :3VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:198W; Output Voltage:3VDC; Series:JWS RoHS Compliant: Yes
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4 600V, SMPS Series N-Channel IGBT 34 A, 600 V, N-CHANNEL IGBT, TO-263AB
600V/ SMPS Series N-Channel IGBT
600V SMPS Series N-Channel IGBT
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
HGTP20N60A4 HGTG20N60A4 FN4781 600V/ SMPS Series N-Channel IGBTs
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBTs
From old datasheet system
INTERSIL[Intersil Corporation]
MG200H1AL2 MG200H1FL1A V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module
(DISCRETE/OPTO)
Toshiba Semiconductor
 
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