| PART |
Description |
Maker |
| H12N60 |
N-Channel Power MOSFET (600V,12A)
|
Hi-Sincerity Mocroelectronics
|
| STGP12NB60HD |
N-CHANNEL 12A 600V TO-220 POWERMESH IGBT
|
SGS Thomson Microelectronics
|
| U12C30 U12C40 U12C50 U12C60 |
POWER RECTIFIERS(12A/300-600V)
POWER RECTIFIERS(12A,300-600V)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| BCR12PM-12LDB00 BCR12PM-12LDA8B00 BCR12PM-12LD-15 |
600V - 12A - Triac Medium Power Use
|
Renesas Electronics Corporation
|
| BCR12LM-12LDB00 BCR12LM-12LD-15 |
600V - 12A - Triac Medium Power Use
|
Renesas Electronics Corporation
|
| MG360V1US41 E002277 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Current, It av:12A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
Toshiba Semiconductor
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRG4PC30U IRG4PC30UPBF |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| STP12NM50 STP12NM50FP STB12NM50-1 |
N-CHANNEL MOSFET with FAST DIODE
N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh Power MOSFET
N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET
N-CHANNEL 500V 0.3OHM 12A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFET
|
ST Microelectronics
STMicroelectronics
SGS Thomson Microelectronics
|
| IRG4PC30UD |
600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| IRG4BC30UD IRG4BC30UDPBF |
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
