| PART |
Description |
Maker |
| PH1920-90 |
Circular Connector; No. of Contacts:6; Series:TVS06; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:11-98 无线功率晶体90瓦，1930-1990兆赫
Wireless Power Transistor 90 Watts 1930-1990 MHz
Wireless Power Transistor 90 Watts, 1930-1990 MHz
|
MACOM[Tyco Electronics]
|
| PHI920-45 PH1920-45 |
Wireless Bipolar Power Transistor, 45W 1930 - 1990 MHz
WIRELESS BIPOLAR POWER TRASISTOR 45W 1930-1990 MHZ 无线双极功率45930-1990兆赫TRASISTOR
|
Tyco Electronics
OKI SEMICONDUCTOR CO., LTD.
|
| 1920A05 |
5 W, 26 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| 1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| 1920A20 |
20 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| DSI-253R0.820G DS1-20L1.960G |
810 MHz - 830 MHz RF/MICROWAVE ISOLATOR
1930 MHz - 1990 MHz RF/MICROWAVE ISOLATOR
|
HITACHI METALS LTD
|
| MHL19926 |
1930–1990 MHz, 10 W, 29.4 dB PCS Band RF Linear LDMOS Amplifier
|
Motorola
|
| 1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor
BJT 双极型晶体管
|
GHz Technology
Micrel Semiconductor, Inc.
|
| PTFB192503EL PTFB192503FL |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930-1990 MHz
|
Infineon Technologies AG
|
| MRF6S19140H |
MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
MOTOROLA
|
| PFM19030 PFM19030SM PFM19030F |
1930-1990 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| 1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor
TRANSISTOR | BJT | NPN | 27V V(BR)CEO | 14A I(C) | FO-91VAR
|
GHz Technology
|
