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  1930 Datasheet PDF File

For 1930 Found Datasheets File :: 1158    Search Time::2.031ms    
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    ITF86172SK8T

INTERSIL[Intersil Corporation]
Part No. ITF86172SK8T
OCR Text ...V, VGS = 0V, f = 1MHz Figure 12 1930 470 215 pF pF pF Qg(TOT) Qg(-5) Qg(TH) Qgs Qgd VGS = 0V to -10V VGS = 0V to -5V VGS = 0V to -1V VDD = -15V, ID = 8.0A, Ig(REF) = -1.0mA Figures 13, 16, 17 38 22 2 6.8 9.2 nC nC nC nC nC td(ON) tr td(OFF)...
Description 10A/ 30V/ 0.016 Ohm/ P-Channel/ Logic Level/ Power MOSFET
10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET
10A 30V 0.016 Ohm P-Channel Logic Level Power MOSFET

File Size 173.61K  /  12 Page

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    LT1930 LT1930A LT1930AES5 LT1930ES5 LT1930-15 LT1930A-15

LINER[Linear Technology]
Linear Technology Corporation
Part No. LT1930 LT1930A LT1930AES5 LT1930ES5 LT1930-15 LT1930A-15
OCR Text 1930 and LT1930A are the industry's highest power SOT-23 switching regulators. Both include an internal 1A, 36V switch allowing high current outputs to be generated in a small footprint. The LT1930 switches at 1.2MHz, allowing the use of ti...
Description From old datasheet system
DC to DC Converter - Datasheet Reference
2.2MHz Boost DC/DC Converter in SOT-23
1A, 1.2MHz/2.2MHz, Step-Up DC/DC Converters in ThinSOT
1A/ 1.2MHz/2.2MHz/ Step-Up DC/DC Converters
   1A, 1.2MHz/2.2MHz, Step-Up DC/DC Converters in ThinSOT

File Size 189.08K  /  12 Page

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    APT8011JLL APT8011

ADPOW[Advanced Power Technology]
Part No. APT8011JLL APT8011
OCR Text ...= 10V MIN TYP MAX UNIT 10020 1930 317 369 48 23 23 83 19 209 nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Sy...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.67K  /  2 Page

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    APT8011 APT8011JFLL

ADPOW[Advanced Power Technology]
Part No. APT8011 APT8011JFLL
OCR Text ...6W MIN TYP MAX UNIT pF 10020 1930 317 369 48 209 23 23 83 19 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol I...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.29K  /  2 Page

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    MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
OCR Text ...rformance, Full Frequency Band (1930 - 1990 MHz) Power Gain -- 13 dB (Typ) @ 60 Watts CW Efficiency -- 45% (Typ) @ 60 Watts CW * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ...
Description HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes
RF Power Field Effect Transistors

File Size 486.59K  /  8 Page

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    MRF18085B MRF18085BLSR3 MRF18085BR3

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF18085B MRF18085BLSR3 MRF18085BR3
OCR Text ...rformance, Full Frequency Band (1930 - 1990 MHz) Power Gain - 12.5 dB (Typ) @ 85 Watts CW Efficiency - 50% (Typ) @ 85 Watts CW * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency, and High Linearity * Integrated...
Description RF Power Field Effect Transistors

File Size 607.07K  /  12 Page

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    SB002-15SPA SB002-15CPA

Sanyo Electric Co.,Ltd.
Sanyo Semiconductor
SANYO[Sanyo Semicon Device]
Part No. SB002-15SPA SB002-15CPA
OCR Text ...T)/41096GI (KOTO)/O255KI, TS No.1930-1/2 SB002-15SPA No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/cri...
Description 150V/ 20mA Rectifier
Shottky barrier diode, 150V/20mA rectifier
150V, 20mA Rectifier
Small signal(single type)

File Size 53.65K  /  2 Page

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    BGY2016

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BGY2016
OCR Text ... 1805 to 1880 MHz; PL = 5 W f = 1930 to 1990 MHz; PL = 5 W Gp1 at PL = 160 mW; Gp2 at PL = 5 mW PL = 16 W PL = 16 W PL = 16 W PD < -60 dBm PD < 20 mW CONDITIONS - - 16 28 - - - 30 - - - - - 2 MIN. 1805 - 80 430 - - - - - - - - - - - - TYP. ...
Description UHF amplifier module

File Size 60.48K  /  12 Page

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    MHW1915

MOTOROLA[Motorola, Inc]
Part No. MHW1915
OCR Text .../Output System MHW1915 15 W 1930 - 1990 MHz RF POWER AMPLIFIER CASE 301AK-01, STYLE 1 MAXIMUM RATINGS Rating DC Supply Voltage DC Bias Voltage RF Input Power RF Output Power Operating Case Temperature Range Storage Temperature Ra...
Description Microwave Bipolar Power Amplifier

File Size 50.25K  /  4 Page

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    MHW1916

MOTOROLA[Motorola, Inc]
Part No. MHW1916
OCR Text ...put Impedances MHW1916 15 W 1930 - 1990 MHz RF POWER AMPLIFIER CASE 301AK-01, STYLE 1 MAXIMUM RATINGS (Flange Temperature = 25C) Rating DC Supply Voltage DC Bias Voltage RF Input Power RF Output Power Operating Case Temperature R...
Description Microwave Bipolar Power Amplifier

File Size 50.77K  /  4 Page

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For 1930 Found Datasheets File :: 1158    Search Time::2.031ms    
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