| PART |
Description |
Maker |
| RJK6013DPE RJK6013DPE-00J3 RJK6013DPE12 RJK6013DPE |
600V - 11A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| AOI11S60 |
600V 11A a MOS TM Power Transistor
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| RJK6032DPD-00J2 RJK6032DPD-15 |
600V - 3A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6002DJE-00Z0 RJK6002DJE-15 |
600V - 2A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S5DPP-E0-T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S7DPK-M0 RJK60S7DPK-M0-T0 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6014DPP-E0 |
600V - 16A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S5DPE-00-J3 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| STU11NB60 6437 |
From old datasheet system
N-CHANNEL 600V - 0.5 - 11A - Max220 PowerMESH TM MOSFET
N-CHANNEL 600V - 0.5ohm - 11A - Max220 PowerMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| APT1001RSVR APT1001RSVRG |
100% Avalanche Tested
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 11A 1.000 Ohm
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
| RJL6012DPE RJL6012DPE-00J3 RJL6012DPE-12 RJL6012DP |
600V - 10A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
