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PT8R2401MD - 600V Discrete IGBT in a D2-Pak package

PT8R2401MD_2984924.PDF Datasheet


 Full text search : 600V Discrete IGBT in a D2-Pak package
 Product Description search : 600V Discrete IGBT in a D2-Pak package


 Related Part Number
PART Description Maker
IRG4BC30K-S IRG4BC30KS IRG4BC30K-STRR 600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
IRF[International Rectifier]
8ETX06 8ETX06-1 8ETX06FP 8ETX06S 600V 8A HyperFast Discrete Diode in a D2-Pak package
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600V 8A HyperFast Discrete Diode in a TO-262 package
Hyperfast Rectifier
IRF[International Rectifier]
IRG4PC50F IRG4PC50F-E 70 A, 600 V, N-CHANNEL IGBT, TO-247AC
70 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
IRF[International Rectifier]
MG200H1AL2 MG200H1FL1A V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module
(DISCRETE/OPTO)
Toshiba Semiconductor
IRGS30B60 IRGSL30B60K IRGS30B60K IRGB30B60K 600V UltraFast 10-30 kHz IGBT in a TO-262 package
600V UltraFast 10-30 kHz IGBT in a D2-Pak package
600V UltraFast 10-30 kHz IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR
IRF[International Rectifier]
30ETH06 30ETH06-1 30ETH06S    Hyperfast Rectifier
600V 30A HyperFast Discrete Diode in a TO-220AC package
600V 30A HyperFast Discrete Diode in a TO-262 package
600V 30A HyperFast Discrete Diode in a D2-Pak (UltraFast) package
IRF[International Rectifier]
IDT61298S25TC IDT61298S25TCB IDT61298S25L28B IDT61 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x4的SRAM
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package x4的SRAM
600V Fast 1-8 kHz Discrete IGBT in a D2-Pak package x4的SRAM
x4 SRAM x4的SRAM
STMicroelectronics N.V.
Unisonic Technologies Co., Ltd.
HIROSE ELECTRIC Co., Ltd.
TE Connectivity, Ltd.
IRG4PC40K 600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
IRF[International Rectifier]
IRG4PC50K 600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.84V, @Vge=15V, Ic=30A)
IRF[International Rectifier]
IRG7RC07SDPBF 600V Copack IGBT in a D-Pak package
International Rectifier
 
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