PART |
Description |
Maker |
CDEP136MENP-1R2M CDEP136MENP-0R7M |
POWER INDUCTORS Ceramic Conformally Coated/Radial High Voltage Gold Max"; Capacitance: 1pF; Voltage: 500V; Tolerance: ±5%; TC: C0G; Body Size: .320" (8.13) x .280" (7.11) x .250" (6.35); Lead Style: .220" (5.59)
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SUMIDA CORPORATION.
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CDEP115MENP-1R3M |
Ceramic Conformally Coated/Radial High Voltage Gold Max"; Capacitance: 1pF; Voltage: 1000V; Tolerance: ±5%; TC: C0G; Body Size: .250" (6.35) x .220" (5.59) x .200" (5.08); Lead Style: .170" (4.32) POWER INDUCTORS
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SUMIDA CORPORATION.
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APA18T12-9H |
HEADER,.1"ST MALE,1RW,3PIN, (10) .025"PST,.23"GOLDTAIL HEADER,ST MALE,1RW,36PIN, .1"CTR,.025"PST,.23"GOLD TAIL 12Vin, 75Watts, Non-isolated DC - DC POL SIP Converter 12Vin5Watts,非隔离直流-直流转换器的SIP波兰
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Astec America, Inc
|
FCH041N60F |
N-Channel SuperFETII FRFETMOSFET 600V, 76A, 41m 600V N-Channel MOSFET, FRFET
|
Fairchild Semiconductor
|
STB4NC60 8256 STB4NC60T4 |
INTEGRATED EC000 MPU N沟道600V 1.8ohm - 4.2A D2PAK封装MOSFET的第二PowerMesh N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh?II MOSFET N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET From old datasheet system N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh⑩II MOSFET N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
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STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
FQI5N60C FQB5N60C FQB5N60CTM |
600V N-Channel MOSFET 4.5 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET 600V N-Channel Advance QFET C-Series
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
FQPF10N60C FQP10N60C |
600V N-Channel Advance Q-FET C-Series 600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
SSU4N60B SSR4N60B SSR4N60BTF SSU4N60BTU SSR4N60BTM |
600V N-Channel B-FET / Substitute of SSU4N60A 600V N-Channel B-FET / Substitute of SSR4N60A 600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
MAX6315US25D1-T MAX6315US25D2-T MAX6315US25D3-T MA |
Open-Drain SOT μP Reset Circuit Open-Drain SOT 渭P Reset Circuit Open-Drain SOT P Reset Circuit Cartridge Fuse; Current Rating:20A; Voltage Rating:600V; Fuse Type:Time Delay; Diameter:20.574mm; Fuse Terminals:Ferrule; Leaded Process Compatible:No; Length:57.15mm; Peak Reflow Compatible (260 C):No; Series:LPJ RoHS Compliant: No SOCKET, 28 PIN, MACHINE, 0.6" WIDE, 0.1" L.S. 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO4 Open-Drain SOT レP Reset Circuit 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO4 ADAPTER SOWIC TO DIP 24 POS 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO4 Open-drain microprocessor reset circuit. Reset threshold(nom) 2.63V. Reset timeout period(min) 1120ms.
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Maxim Integrated Produc... MAXIM - Dallas Semiconductor http:// MAXIM[Maxim Integrated Products] 电源管理 Maxim Integrated Products, Inc.
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STF9NK60ZD STB9NK60ZD STB9NK60ZDT4 STP9NK60ZD |
N-CHANNEL 600V - 0.85 OHM - 7A TO-220/TO-220FP/D2PAK FAST DIODE SUPERMESH MOSFET N-CHANNEL 600V - 0.85OHM - 7A TO-220/TO-220FP/DPAK SUPERFREDMESH MOSFET From old datasheet system N-CHANNEL 600V - 0.85? - 7A TO-220/TO-220FP/DPAK SuperFREDMesh MOSFET N-CHANNEL 600V - 0.85 - 7A TO-220/TO-220FP/DPAK SuperFREDMesh MOSFET
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
STS1HNC60 |
N-CHANNEL 600V 7 OHM 0.4A SO-8 POWERMESH II MOSFET N-CHANNEL 600V - 7ohm - 0.4A SO-8 PowerMesh?II MOSFET N-CHANNEL 600V - 7ohm - 0.4A SO-8 PowerMesh⑩II MOSFET N沟道600V 7ohm - 0.4A的SO - 8 MOSFET的第二PowerMesh
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
STGB3NB60KD STGB3NB60KDT4 STGD3NB60K STGD3NB60KT4 |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH??IGBT (STGP3NB60K / STGB3NB60K) N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESHIGBT N沟道3A 600V IGBT的TO-220/DPAK/D2PAK PowerMESH (STGD3NB60K / STGP3NB60K / STGP3NB60KD / STGB3NB60KD) N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT
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STMicroelectronics N.V. ST Microelectronics
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