| PART |
Description |
Maker |
| MII75-12A3 MDI75-12A3 MID75-12A3 |
IGBT Modules - Short Circuit SOA Capability Square RBSOA 90 A, 1200 V, N-CHANNEL IGBT
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| CM75TU-12F |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM75DU-12F |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM150DY-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM300DU-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM150TU-12F |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM600HU-12F |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM100E3U-12F |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM15TF-12H |
IGBT Modules: 600V
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| MID100-12A3 MID200-12A4 |
IGBT Modules 135 A, 1200 V, N-CHANNEL IGBT
IGBT Modules - Short Circuit SOA Capability Square RBSOA 270 A, 1200 V, N-CHANNEL IGBT
|
IXYS, Corp.
|
