| PART |
Description |
Maker |
| CM75BU-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM75DU-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM75TF-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM600HU-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM200TU-12F |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| PM30RHC060 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 30A I(C)
Intellimod-3 Modules: Three Phase Brake, IGBT Inverter Output 30 Amp, 110-230 Volt Line
|
Powerex Power Semiconductors
|
| VIO130-06P1 VII130-06P1 VDI130-06P1 VID130-06P1 IX |
IGBT Modules
From old datasheet system
IGBT Modules: Buck Configurated IGBT Modules
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS[IXYS Corporation]
|
| CM200DU-12H |
HIGH POWER SWITCHING USE INSULATED TYPE
IGBT Modules: 600V
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| CM200E3U-12H |
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
IGBT Modules: 600V
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| HGT1Y40N60B3D |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264
70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
|
FAIRCHILD[Fairchild Semiconductor]
|
