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OMS38L60ML - TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 76A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展|0A条（c）的晶体管| MOSFET功率模块| 3 - PH值大桥| 100V的五（巴西）直|0A条（丁）晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 76A号口（丙 30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET

OMS38L60ML_417516.PDF Datasheet


Part No.	OMS38L60ML OMS32F60ML OMS60N10ML OMS75N06ML
Description	TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 600V V(BR)CES \| 76A I(C) 晶体管\| IGBT功率模块\| 3 - PH值大桥\| 600V的五（巴西）国际消费电子展\|0A条（c）的晶体管\| MOSFET功率模块\| 3 - PH值大桥\| 100V的五（巴西）直\|0A条（丁）晶体管\| IGBT功率模块\| 3 - PH值大桥\| 600V的五（巴西）国际消费电子展\| 76A号口（丙 30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
File Size	249.43K / 4 Page
Maker	Vicor, Corp.
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Full text search : TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 76A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展|0A条（c）的晶体管| MOSFET功率模块| 3 - PH值大桥| 100V的五（巴西）直|0A条（丁）晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 76A号口（丙 30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET

Product Description search : TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 76A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展|0A条（c）的晶体管| MOSFET功率模块| 3 - PH值大桥| 100V的五（巴西）直|0A条（丁）晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 76A号口（丙 30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET

Related Part Number

PART	Description	Maker
X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9	:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt :SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage :SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2 RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm; Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8 IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,	http:// INTERSIL[Intersil Corporation] Intersil, Corp.
VDI125-12S4 VII125-12S4 VID125-12S4	TRANSISTOR \| IGBT POWER MODULE \| INDEPENDENT \| 1.2KV V(BR)CES \| 125A I(C) 晶体管\| IGBT功率模块\|独立\| 1.2KV五（巴西）国际消费电子展\| 125A条一（c TRANSISTOR \| IGBT POWER MODULE \| HALF BRIDGE \| 1.2KV V(BR)CES \| 125A I(C) 晶体管\| IGBT功率模块\|半桥\| 1.2KV五（巴西）国际消费电子展\| 125A条一（c	IXYS, Corp.
1MBI600LP060	TRANSISTOR \| IGBT POWER MODULE \| INDEPENDENT \| 600V V(BR)CES \| 600A I(C)
MG400J2YS60A	GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT From old datasheet system	Toshiba Semiconductor
FZ1200R17KE3	IGBT-Wechselrichter / IGBT-inverter IGBT Power Module	eupec GmbH
MIG100J7CSB1W	MINIATURE POWER RELAY 东芝智能功率模块IGBT的硅频道 TOSHIBA Intelligent Power Module Silicon N Channel IGBT Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications	Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
IRGRDN400M12	TRANSISTOR \| IGBT POWER MODULE \| INDEPENDENT \| 1.2KV V(BR)CES \| 400A I(C) 晶体管\| IGBT功率模块\|独立\| 1.2KV五（巴西）国际消费电子展\|四楼一（c	Diodes, Inc.
FS8R12KF	TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 1.2KV V(BR)CES \| 8A I(C) 晶体管\| IGBT功率模块\| 3 - PH值大桥\| 1.2KV五（巴西）国际消费电子展\| 8A条一（c	ECM Electronics, Ltd.
CM200DU12H	TRANSISTOR \| IGBT POWER MODULE \| HALF BRIDGE \| 600V V(BR)CES \| 200A I(C) 晶体管\| IGBT功率模块\|半桥\| 600V的五（巴西）国际消费电子展\| 200安培我（丙）	Powerex, Inc.
VII100-12S4	TRANSISTOR \| IGBT POWER MODULE \| HALF BRIDGE \| 1.2KV V(BR)CES \| 100A I(C) 晶体管\| IGBT功率模块\|半桥\| 1.2KV五（巴西）国际消费电子展\| 100号A一（c	Aimtec

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