| PART |
Description |
Maker |
| FFH50US60S |
50A, 600V StealthDiode 50 A, 600 V, SILICON, RECTIFIER DIODE, TO-247
50A, 600V Stealth⑩ Diode
50A, 600V Stealth Diode
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| STGW50NB60H |
N-CHANNEL 50A - 600V TO-247 POWERMESH IGBT
|
ST Microelectronics
|
| STGY50NC60WD GY50NC60WD |
N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| SSG50C120 SSG50C60 SSG50C100 SSG50C40 |
TRIAC|1.2KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|600V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 600V的五（DRM）的| 50A条口（T）的有效值|08VARM8
TRIAC|1KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|400V V(DRM)|50A I(T)RMS|TO-208VARM8
|
|
| APL602J |
Power MOSFET; Package: ISOTOP®; ID (A): 43; RDS(on) (Ohms): 0.125; BVDSS (V): 600; 43 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
LINEAR MOSFET 600V 43A 0.125?/a>
LINEAR MOSFET 600V 43A 0.125з
|
Microsemi, Corp.
Advanced Power Technology
|
| 6MBI50F-060 |
IGBT(600V 50A)
|
Fuji Electric
|
| STE53NC50 |
N-CHANNEL 500V - 0.070ohm - 53A ISOTOP PowerMesh?II MOSFET
N-CHANNEL 500V - 0.070ohm - 53A ISOTOP PowerMesh⑩II MOSFET
N-CHANNEL 500V - 0.070ohm - 53A ISOTOP PowerMeshII MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| S50VB60 |
Bridge Diode(600V 50A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| 6MBP50RA06 6MBP50RA060 |
IGBT-IPM(600V/50A)
|
FUJI[Fuji Electric]
|
| 7MBR50SB060 |
IGBT(600V/50A/PIM)
|
FUJI[Fuji Electric]
|
| PRHMB50A6A |
IGBT MODULE Chopper 50A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
