| PART |
Description |
Maker |
| STW12NC60 7175 |
N-CHANNEL 600V 0.48 OHM 12A TO-247 POWERMESH II MOSFET
From old datasheet system
N-CHANNEL 600V 0.48 OHM 12A TO-247 POWERMESH II MOSFET
|
ST Microelectronics
STMicroelectronics
|
| STH13NB60FI STH13NB60 STW13NB60 |
N-CHANNEL Power MOS MOSFET
N - CHANNEL 600V - 0.48ohm - 13A - TO-247/ISOWATT218 PowerMESH MOSFET
N - CHANNEL 600V - 0.48W - 13A - TO-247/ISOWATT218 PowerMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
|
| STGW12NB60H |
N-CHANNEL 12A - 600V TO-247 PowerMESH IGBT
N-CHANNEL 12A - 600V TO-247 PowerMESH IGBT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| HGTG12N60D1 HGTG12N60D1D |
12A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
|
INTERSIL[Intersil Corporation]
|
| 12FR120 12FR120M A12FR120 A12FR120M 12FR100 12FR10 |
STANDARD RECOVERY DIODES
Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:16 x 30; Jacket Color:Green/Yellow; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1015, CSA Type TEW, JQA-F-, Passes VW-1 Flame Test RoHS Compliant: Yes 标准恢复二极
STANDARD RECOVERY DIODES 标准恢复二极
CAPACITOR 8200UF 25V ELEC TSHA
WIRE 18AWG WHITE UL 1015 600V
UL STYLE 1015, CSA TYPE TEW, 600V, 105C, GREEN W. YELLOW
WIRE, UL1015, 18AWG (16X30G), 600V, RED
100V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
1000V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
1200V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
400V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
600V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
800V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRG4BC30W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| FDP12N60NZ FDPF12N60NZ |
N-Channel UniFETTM II MOSFET 600V, 12A, 650m
N-Channel UniFETTM II MOSFET 600 V, 12 A, 650 m?
|
Fairchild Semiconductor
|
| PR103W PR103K PR134K PR101W PR114K PR105KW PR125K |
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|800V V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|1KV V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|400V V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1KV V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|1.2KV V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|1.2KV V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|600V V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1.2KV V(RRM)|12A I(T)
THYRISTOR MODULE|AC SWITCH|1.2KV V(RRM)|12A I(T) 可控硅模块|交流开关| 1.2KV五（无线资源管理）| 12A条疙（T
|
Stackpole Electronics, Inc.
|
| R6012ANX R6012ANX12 |
Nch 600V 12A Power MOSFET
|
Rohm
|
| RJK60S3DPD-00J2 |
600V - 12A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RFP12N06RLE RFD12N06RLESM RFD12N06RLE FN2407 |
From old datasheet system
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs
12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N沟道,逻辑电平,功率MOS场效应管) 12 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
INTERSIL[Intersil Corporation]
Fairchild Semiconductor, Corp.
|
