| PART |
Description |
Maker |
| APT6015JVR |
POWER MOS V 600V 35A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| KBU3501-G KBU3502-G KBU3504-G KBU3506-G KBU3510-G |
Bridge Rectifiers, V-RRM=600V, V-DC=600V, I-(AV)=35A
Bridge Rectifiers, V-RRM=50V, V-DC=50V, I-(AV)=35A
Bridge Rectifiers, V-RRM=100V, V-DC=100V, I-(AV)=35A
Bridge Rectifiers, V-RRM=200V, V-DC=200V, I-(AV)=35A
Silicon Bridge Rectifiers
Bridge Rectifiers, V<sub>RRM</sub>=1000V, V<sub>DC</sub>=1000V, I<sub>(AV)</sub>=35A
Bridge Rectifiers, V-RRM=800V, V-DC=800V, I-(AV)=35A
Bridge Rectifiers, V-RRM=400V, V-DC=400V, I-(AV)=35A
|
Comchip Technology
|
| 57.504.0055.0 |
Terminal Block; Wire Size (AWG):22-10; Mounting Type:DIN Rail; Color:Gray; Current Rating:35A; Terminal Block Clamp Type:Feed-Thru Terminals; Voltage Rating:600V RoHS Compliant: Yes 35 A, MODULAR TERMINAL BLOCK
|
Wieland Electric, Inc.
|
| IRGPC50M |
INSULATED GATE BIPOLAR TRANSISTOR(VCES=600V, @VGE=15V, IC=35A)
|
IRF
International Rectifier
|
| IRFBA35N60C |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 35A I(D) | TO-273AA 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 35A条（丁）|73AA
|
International Rectifier, Corp.
|
| BD350006 BD3506 BD3500 BD3501 BD3502 BD3503 BD3504 |
35A BOSCH TYPE PRESS-FIT DIODE
|
WTE[Won-Top Electronics]
|
| BD3524 BD3520 |
35A AVALANCHE BOSCH TYPE PRESS-FIT DIODE
|
WTE[Won-Top Electronics]
|
| BD3520 |
35A AVALANCHE BOSCH TYPE PRESS-FIT DIODE
|
Won-Top Electronics Co., Ltd.
|
| RJK0652DPB RJK0652DPB-00-J5 RJK0652DPB-13 |
60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| APT6030BN APT6033BN |
POWER MOS IV 600V 22.0A 0.33 Ohm / 600V 23.0A 0.30 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| APT6040 APT6040BN APT6045BN |
POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
