PART |
Description |
Maker |
IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
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IRG4PC60F-P |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC Solder Plate package INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
|
IRF[International Rectifier]
|
IRG4RC20FTR IRG4RC20FTRL IRG4RC20FTRR |
600V Fast 1-8 kHz Single IGBT in a D-Pak package
|
International Rectifier
|
IRG4BC30FD |
600V Fast 1-8 kHz Copack IGBT in a TO-220AB package
|
International Rectifier
|
IRG4PC50F-E |
Gen 4 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier
|
CPV364M4F |
600V Fast 1-8 kHz 3-Phase Bridge IGBT in a IMS-2 package
|
International Rectifier
|
IRG4PC40 IRG4PC40F IRG4PC40F-EPBF |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) 49 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
|
IRF[International Rectifier] Vishay Intertechnology, Inc.
|
IRG4BC20F |
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) 绝缘栅双极晶体管VCES和\u003d 600V电压的Vce(on)典\u003d 1.66V,@和VGE \u003d 15V的,集成电路\u003d 9.0,9.0
|
IRF[International Rectifier] International Rectifier, Corp.
|
IRG4PC50FD IRG4PC50FD-E |
600V Fast 1-8 kHz Copack IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.45伏,@和VGE \u003d 15V的,集成电路\u003d 39A条)
|
IRF International Rectifier, Corp.
|
IXGT60N60B2 |
Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching 75 A, 600 V, N-CHANNEL IGBT, TO-268AA
|
IXYS, Corp.
|
IRG4BC30U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
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IRF[International Rectifier]
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