PART |
Description |
Maker |
APT60GT60JRD |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs. Thunderbolt IGBT & FRED 600V 90A The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
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Advanced Power Technology
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APT20GT60CR |
Thunderbolt IGBT 600V 25A The Thunderbolt IGBT is a new generation of high voltage power IGBTs. The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
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APT30GT60KR |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 58A The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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APT15GT60KR |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 31A The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
APT8GT60KR |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 17A The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
APT75GT120JR |
Thunderbolt IGBT
|
Advanced Power Technology
|
APT50GT60SR APT50GT60SRG APT50GT60BRG APT50GT60BR |
Thunderbolt IGBT
|
ADPOW[Advanced Power Technology]
|
APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
Microsemi Corporation http:// Microsemi, Corp.
|
APT20GS60KR APT20GS60KRG |
Thunderbolt High Speed NPT IGBT
|
Microsemi Corporation
|
APT150GT120JR |
Thunderbolt IGBT Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
APT200GT60JR |
Thunderbolt IGBT Thunderbolt IGBT
|
Microsemi Corporation
|