PART |
Description |
Maker |
CPV364M4K |
Trans IGBT Module N-CH 600V 24A 13-Pin IMS-2
|
Vishay Semiconductors
|
R6024KNZ1C9 |
Nch 600V 24A Power MOSFET
|
ROHM
|
IRGPC40M |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)
|
IRF[International Rectifier]
|
IRGBC40M-S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V @Vge=15V Ic=24A)
|
IRF[International Rectifier]
|
IRG4PH50U |
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A) INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
|
IRF[International Rectifier]
|
STD30PF03LT4 |
P-CHANNEL 30V - 0.025 OHM - 24A IPAK/DPAK STRIPFET II POWER MOSFET
|
ST Microelectronics
|
STB24NF10 |
N - CHANNEL 100V - 0.07Ohm - 24A TO-263 LOW GATE CHARGE STripFET POWER MOSFET
|
SGS Thomson Microelectronics
|
IRG4PH50UD IRG4PH50 |
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A)
|
IRF[International Rectifier]
|
MRI52-A3 |
Standard : UL - IEC 300V - 250V 10A - 24A
|
Eldeco Srl
|
RQ3E110AJ |
Nch 30V 24A Middle Power MOSFET
|
Rohm
|