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  z-diodes Datasheet PDF File

For z-diodes Found Datasheets File :: 10418    Search Time::1.703ms    
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    1N5356B 1N5364B 1N5347B 1N5349B 1N5339B 1N5371B 1N5338B 1N5352B 1N5366B 1N5374B 1N5372B 1N5375B 1N5333B 1N5378B 1N5344B

Microsemi, Corp.
Motorola Mobility Holdings, Inc.
Motorola Inc
Motorola, Inc.
MOTOROLA[Motorola Inc]
ON Semi
MOTOROLA[Motorola, Inc]
Diotec Elektronische
Part No. 1N5356B 1N5364B 1N5347B 1N5349B 1N5339B 1N5371B 1N5338B 1N5352B 1N5366B 1N5374B 1N5372B 1N5375B 1N5333B 1N5378B 1N5344B 1N5355B 1N5353B 1N5342B 1N5388B 1N5359B 1N5345B 1N5381B 1N5363B 1N5383B 1N5336B ON0008 1N5341B 1N5361B 1N5334B 1N5335B 1N5337B 1N5340B 1N5343B 1N5346B 1N5348 1N5348B 1N5350B 1N5351B 1N5357B 1N5358B 1N5360B 1N5362B 1N5365B 1N5367B 1N5368B 1N5369B 1N5370B 1N5373B 1N5376B 1N5377B 1N5379B 1N5380B 1N5382B 1N5384B 1N5385B 1N5386 1N5386B 1N5387B 1N5333BTHRU1N5388B 1N5354B
OCR Text ...NER VOLTAGE (VZ) AND IMPEDANCE (Z ZT & ZZK) Test conditions for zener voltage and impedance are as follows: IZ is applied 40 10 ms prior to...Diodes -- Axial Leaded 5 Watt Surmetic 40 B D K 2 NOTE: 1. LEAD DIAMETER & FINISH NOT CONTROLLE...
Description    5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 16 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 47 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 12 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 3.3 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 6 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.300 VOLTS 5瓦稳压稳压二极管3.30
MOSFET P-CH 250V 200MA SOT-89
500 mW DO-35 Glass Zener Voltage Regulator Diodes
From old datasheet system
Silicon-Power-z-diodes (non-planar technology)

File Size 87.83K  /  6 Page

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    BTS117

INFINEON TECHNOLOGIES AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BTS117
OCR Text ...FET S VIN 3 2 D ID VDS Vbb V Z D S HITFET Short circuit behaviour Input circuit (ESD protection) V IN I D(SCp) IN I D(Li...diodes are not designed for DC current > 2 mA @ VIN >10V. t0 : tm : t1 : Turn on into a short ...
Description 10 A BUF OR INV BASED PRPHL DRVR, PSFM3
Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal Shutdown Overload protection)
From old datasheet system

File Size 137.31K  /  10 Page

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text ... 10 T herm al R espon se (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 PD M 0 .1 0.02 0.01 t S INGLE PULSE ( TH ERMA L RES PO NSE ) 1 t2 Notes : 1. D uty fac tor D = t 1 /t 2 0.01 0.0000 1 2. P ea k TJ = P...
Description IGBT SIP MODULE

File Size 269.79K  /  10 Page

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    DCR806SG27 DCR806SG28 DCR806SG DCR806SG24 DCR806SG25 DCR806SG26

DYNEX[Dynex Semiconductor]
Part No. DCR806SG27 DCR806SG28 DCR806SG DCR806SG24 DCR806SG25 DCR806SG26
OCR Text ...clamps right up to 83kN of our `Z' 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN48...
Description Phase Control Thyristor

File Size 114.80K  /  8 Page

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    GA100TS120U

IRF[International Rectifier]
Part No. GA100TS120U
OCR Text ...01 0.0001 2. Peak TJ = PDM x Z thJC + TC A 10 0.001 0.01 0.1 1 t 1 , R e cta n g u la r P u ls e D u ra tio n (s e c) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com G...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 268.82K  /  10 Page

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    GA125TS120U

IRF[International Rectifier]
Part No. GA125TS120U
OCR Text ...01 0.0001 2. Peak TJ = PDM x Z thJC + TC A 1000 0.001 0.01 0.1 1 10 100 t 1 , R ecta ngu la r Pulse D u ration (se c) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.co...
Description 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 220.37K  /  10 Page

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    GA50TS120U

IRF[International Rectifier]
Part No. GA50TS120U
OCR Text ...01 0.0001 2. Peak TJ = PDM x Z thJC + TC A 10 0.001 0.01 0.1 1 t 1 , R ecta ngu la r Pulse D u ration (se c) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA50TS120U...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 208.85K  /  10 Page

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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ...01 0.0001 2. Peak TJ = PDM x Z thJC + TC A 1000 0.001 0.01 0.1 1 10 100 t 1 , R e ctan gula r Pulse D uratio n (se c) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.co...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    IRF7807D1

International Rectifier
Part No. IRF7807D1
OCR Text ...ent 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 0.01 1 P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 10 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.001 t1 , ...
Description MOSFET / SCHOTTKY DIODE

File Size 162.75K  /  8 Page

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ...ent 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 0.01 1 P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 10 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.001 t1 , ...
Description MOSFET / SCHOTTKY DIODE

File Size 131.40K  /  8 Page

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For z-diodes Found Datasheets File :: 10418    Search Time::1.703ms    
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