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    HYNIX SEMICONDUCTOR INC
Part No. HY27US08121B-TIS HY27US16121B-TIP HY27US08121B-FPCB
OCR Text ...hronously introduced using ce , we , ale and cle input pin. the on-chip program/erase controller automates all progra m and erase functions includ ing pulse repetition, where required, and internal verifica tion and margining of data. the ...
Description 64M X 8 FLASH 3.3V PROM, 18 ns, PDSO48
32M X 16 FLASH 3.3V PROM, 18 ns, PDSO48
64M X 8 FLASH 3.3V PROM, 18 ns, PBGA63

File Size 368.68K  /  40 Page

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    MB81EDS516545

Fujitsu Component Limited.
Part No. MB81EDS516545
OCR Text ... commands inputs, RAS, CAS, and WE, and address inputs. CS = High disable command input but internal operation such as burst cycle will not ...tIS Command (CS, RAS, CAS, WE) Address tIH tIPW 7. Input Data Mask (DM0 to DM7) DM is an ...
Description MEMORY Consumer FCRAM CMOS 512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP

File Size 470.87K  /  60 Page

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    M13S128168A-7.5AB M13S128168A-5BG M13S128168A-5T M13S128168A-5TG M13S128168A-6BG M13S128168A-6T M13S128168A-6TG

Elite Semiconductor Memory Technology Inc.
Part No. M13S128168A-7.5AB M13S128168A-5BG M13S128168A-5T M13S128168A-5TG M13S128168A-6BG M13S128168A-6T M13S128168A-6TG
OCR Text ...der Control Logic CS RAS CAS WE Data Control Circuit Input & Output Buffer Latch Circuit Column Address Buffer & Refresh Coun...tIS tIH tIS tIH tIPW tDQSH tDQSL tDSS tDSH tDQSQ tHZ tLZ -5 min 5.0 -0.7 0.45 0.45 -0.6 0.75 0.45...
Description 2M x 16 Bit x 4 Banks Double Data Rate SDRAM

File Size 1,502.33K  /  49 Page

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    M13S2561616A09 M13S2561616A-4BG M13S2561616A-5BG M13S2561616A-6BG M13S2561616A-4TG M13S2561616A-5TG M13S2561616A-6TG

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Elite Semiconductor Memory Technology Inc.
Part No. M13S2561616A09 M13S2561616A-4BG M13S2561616A-5BG M13S2561616A-6BG M13S2561616A-4TG M13S2561616A-5TG M13S2561616A-6TG
OCR Text ...der Control Logic CS RAS CAS WE Data Control Circuit Input & Output Buffer Latch Circuit Column Address Buffer & Refresh Coun...tIS tIH tIS tIH tIPW tDQSH tDQSL tDSS tDSH tDQSQ tHZ -0.75 0.45 0.45 -0.75 0.8 0.6 0.45 1.75 0.9 ...
Description 4M x 16 Bit x 4 Banks Double Data Rate SDRAM

File Size 1,324.48K  /  49 Page

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    M13S2561616A1 M13S2561616A-5BIG M13S2561616A-5TIG M13S2561616A-6BIG M13S2561616A-6TIG M13S2561616A

Elite Semiconductor Mem...
Elite Semiconductor Memory Technology Inc.
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Part No. M13S2561616A1 M13S2561616A-5BIG M13S2561616A-5TIG M13S2561616A-6BIG M13S2561616A-6TIG M13S2561616A
OCR Text ...der Control Logic CS RAS CAS WE Data Control Circuit Input & Output Buffer Latch Circuit Column Address Buffer & Refresh Coun...tIS tIH tIS tIH tIPW tDQSH tDQSL tDSS tDSH tDQSQ tHZ tLZ -0.75 0.45 0.45 -0.55 0.85 0.6 0.45 1.75...
Description 4M x 16 Bit x 4 Banks Double Data Rate SDRAM

File Size 1,324.61K  /  49 Page

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    K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60
OCR Text ...SCRIPTION CK,CK CKE CS RAS CAS WE DQS DMi RFU Differential Clock Input Clock Enable Chip Select Row Address Strobe Column Address Strobe Wr...tIS tIH tDS tDH tHP tQH 1 1 Simplified Timing @ BL=2, CL=3 tCH tCK tCL 0 CK, CK 1 2 ...
Description 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

File Size 280.12K  /  19 Page

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    M53D128168A-7.5BAIG M53D128168A1 M53D128168A-10BAIG

Elite Semiconductor Memory Technology Inc.
Part No. M53D128168A-7.5BAIG M53D128168A1 M53D128168A-10BAIG
OCR Text ...S Sense Amplifier DM CAS WE Data Control Circuit Input & Output Buffer Latch Circuit RAS Control Logic CS Comman...tIS tIH tIS tIH tIPW tDQSH tDQSL tDSS tDSH tDQSQ tHZ tLZ 2.0 1.3 2.0 1.5 3.0 0.4 0.4 0.2 0.2 1.0 Sym...
Description 2M x 16 Bit x 4 Banks Mobile DDR SDRAM

File Size 1,082.42K  /  46 Page

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    M53D128168A-7.5BAG M53D128168A-7.5BG M53D128168A M53D128168A-10BAG M53D128168A-10BG

Elite Semiconductor Memory Technology Inc.
Part No. M53D128168A-7.5BAG M53D128168A-7.5BG M53D128168A M53D128168A-10BAG M53D128168A-10BG
OCR Text ...S Sense Amplifier DM CAS WE Data Control Circuit Input & Output Buffer Latch Circuit RAS Control Logic CS Comman...tIS tIH tIS tIH tIPW tDQSH tDQSL tDSS tDSH tDQSQ tHZ tLZ 2.0 1.3 2.0 1.5 3.0 0.4 0.4 0.2 0.2 1.0 Sym...
Description 2M x 16 Bit x 4 Banks Mobile DDR SDRAM

File Size 1,100.16K  /  47 Page

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    M13S64164A09 M13S64164A-5TG M13S64164A-6BG M13S64164A-09 M13S64164A-5BG

Elite Semiconductor Memory Technology Inc.
Elite Semiconductor Mem...
Part No. M13S64164A09 M13S64164A-5TG M13S64164A-6BG M13S64164A-09 M13S64164A-5BG
OCR Text ...der Control Logic CS RAS CAS WE Data Control Circuit Input & Output Buffer Latch Circuit Column Address Buffer & Refresh Coun...tIS tIH tIS tIH tIPW tDQSH tDQSL tDSS tDSH tDQSQ tHZ -0.7 0.45 0.45 -0.6 0.75 0.45 0.45 1.75 0.75...
Description 1M x 16 Bit x 4 Banks Double Data Rate SDRAM

File Size 1,561.73K  /  48 Page

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    K4D261638E K4D261638E-TC40 K4D261638E-TC33 K4D261638E-TC36 K4D261638E-TC50 K4D261638E-TC2A K4D261638E-TC2A0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4D261638E K4D261638E-TC40 K4D261638E-TC33 K4D261638E-TC36 K4D261638E-TC50 K4D261638E-TC2A K4D261638E-TC2A0
OCR Text ... DQ7 NC VDDQ LDQS NC VDD NC LDM WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 ...tIS Address and Control input hold tIH DQ and DM setup time to DQS tDS DQ and DM hold time to DQS tD...
Description 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM 200万16 × 4,银行双数据速率同步DRAM

File Size 213.19K  /  16 Page

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