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  vdd Datasheet PDF File

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ...S = 10V, See Fig. 6 and 13 --- vdd = 28V --- ID = 43A ns --- RG = 3.6 --- VGS = 10V, See Fig. 10 D Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact S 3210 --- VGS = 0V 690 --- VDS = 25V 140 --- pF =...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ...GS = 10V, See Fig. 6 and 13 --- vdd = 28V --- ID = 43A ns --- RG = 3.6 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact 3210 --- VGS = 0V 690 --- VDS = 25V 140 --- pF = 1.0...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ...0V ID = 75A VDS = 44V VGS = 10V vdd = 28V ID = 75A RG = 6.8 VGS = 10V e e Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz ...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 298.51K  /  12 Page

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ...S = 10V, See Fig. 6 and 13 --- vdd = 20V --- ID = 60A ns --- RG = 3.6 --- RD = 0.33, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 D ...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

File Size 97.26K  /  8 Page

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    IRF1302L IRF1302S

IRF[International Rectifier]
Part No. IRF1302L IRF1302S
OCR Text ...7 nC VDS = 16V 46 VGS = 10V --- vdd = 11V --- ID = 104A ns --- RG = 4.5 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 --- VGS = 0V,...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

File Size 225.99K  /  11 Page

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    IRF1302

IRF[International Rectifier]
Part No. IRF1302
OCR Text ...7 nC VDS = 16V 46 VGS = 10V --- vdd = 11V --- ID = 104A ns --- RG = 4.5 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 --- VGS = 0V, ...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)

File Size 516.95K  /  9 Page

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    MGA-637P8-BLKG MGA-637P8-TR1G

AVAGO TECHNOLOGIES LIMITED
Part No. MGA-637P8-BLKG MGA-637P8-TR1G
OCR Text ...c4 c5 rb c1 l3 vbias1 c8 pwrdwn vdd 3 electrical specifi cations [1, 4] t a = 25 c, vdd = vbias1 = 4.8 v, rf measurement at 1.7 ghz, measured on demo board in figure 5 with component listed in table1. symbol parameter and test condition...
Description High Linearity Low Noise Amplifi er

File Size 162.88K  /  14 Page

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ...S = 10V, See Fig. 6 and 13 --- vdd = 50V --- ID = 22A ns --- RG = 3.6 --- RD = 2.9, See Fig. 10 Between lead, --- nH and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteris...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 152.94K  /  10 Page

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ...S = 10V, See Fig. 6 and 13 --- vdd = 50V --- ID = 22A ns --- RG = 3.6 --- RD = 2.9, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 D ...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 92.91K  /  8 Page

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ...GS = 10V, See Fig. 6 and 13 --- vdd = 50V --- ID = 25A ns --- RG = 9.1 --- RD = 2.0, See Fig. 10 Between lead, --- 6mm (0.25in.) nH from package --- and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 Source...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

File Size 319.11K  /  8 Page

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