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    MSM6404A MSM6404VS MSM6404A_MSM6404VS MSM6404 MSM6404A-XXXGS-2K MSM6404A-XXXGS-K MSM6404A-XXXRS

OKI electronic components
OKI[OKI electronic componets]
Part No. MSM6404A MSM6404VS MSM6404A_MSM6404VS MSM6404 MSM6404A-XXXGS-2K MSM6404A-XXXGS-K MSM6404A-XXXRS
OCR Text ...tfW tCY tDS tDH tWS/tWT tWC tWP tss tSH tDR tDCR tDI1 tDI2 tCT/tTT tSR/tTR tCR tCP tSP/tTP tSINH tIINH Condition -- -- -- -- -- -- -- -- -- CL = 15 pF CL = 15 pF CL = 15 pF CL = 15 pF CL = 15 pF CL = 15 pF CL = 15 pF CL = 15 pF CL = 15 pF -...
Description High speed and high perfomance 4-bit microcontroller
From old datasheet system
High speed and High performance 4-Bit Microcontroller

File Size 197.58K  /  25 Page

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    K4S561632A K4S561632A-TC_L1H K4S561632A-TC_L1L K4S561632A-TC_L75 K4S561632A-TC_L80 K4S561632A-TC/L1H K4S561632A-TC/L1L K

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S561632A K4S561632A-TC_L1H K4S561632A-TC_L1L K4S561632A-TC_L75 K4S561632A-TC_L80 K4S561632A-TC/L1H K4S561632A-TC/L1L K4S561632A-TC/L75 K4S561632A-TC/L80
OCR Text ...latency=3 CAS latency=2 tCH tCL tss tSH tSLZ tSHZ tOH 2.7 2.5 2.5 1.5 0.8 1 5.4 tSAC Symbol Min CLK cycle time tCC 7.5 5.4 3 3 3 2 1 1 6 -75 Max 1000 Min 8 6 3 3 3 3 2 1 1 6 6 -80 Max 1000 Min 10 10 6 6 3 3 3 3 2 1 1 -1H Max 1000 Min 10 12 ...
Description 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

File Size 125.82K  /  10 Page

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    K4S561632B K4S561632B-TC_L1L K4S561632B-TC_L1H K4S561632B-TC_L75 K4S561632B-TC/L1L K4S561632B-TC/L75 K4S561632B-TC/L1H

Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S561632B K4S561632B-TC_L1L K4S561632B-TC_L1H K4S561632B-TC_L75 K4S561632B-TC/L1L K4S561632B-TC/L75 K4S561632B-TC/L1H
OCR Text ...latency=3 CAS latency=2 tCH tCL tss tSH tSLZ tSHZ tOH 3 2.5 2.5 1.5 0.8 1 5.4 tSAC Symbol Min CLK cycle time tCC 7.5 5.4 3 3 3 3 2 1 1 6 6 -75 Max 1000 Min 10 10 6 6 3 3 3 3 2 1 1 -1H Max 1000 Min 10 12 CMOS SDRAM -1L Max 1000 6 7 ns ns...
Description 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM米16 × 4银行同步DRAM LVTTL

File Size 130.19K  /  11 Page

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    K4S561632D K4S561632D-TC_L75 K4S561632D-TC_L1H K4S561632D-TC_L1L K4S561632D-TC_L60 K4S561632D-TC_L7C K4S561632D-TC/L1H K

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S561632D K4S561632D-TC_L75 K4S561632D-TC_L1H K4S561632D-TC_L1L K4S561632D-TC_L60 K4S561632D-TC_L7C K4S561632D-TC/L1H K4S561632D-TC/L1L K4S561632D-TC/L60 K4S561632D-TC/L75 K4S561632D-TC/L7C K4S561632D-TC75000
OCR Text ...latency=3 CAS latency=2 tCH tCL tss tSH tSLZ tSHZ tOH 2.5 2.5 2.5 1.5 1 1 5 tSAC (AC operating conditions unless otherwise noted) Symbol Min CLK cycle time CLK to valid output delay Output data hold time tCC 6 5 3 3 2.5 2.5 1.5 0.8 1 5.4 5....
Description 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

File Size 59.61K  /  11 Page

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    K4S561633C-N K4S561633C-P1H K4S561633C-P1L K4S561633C-P75 K4S561633C-RBL K4S561633C-RL K4S561633C-RL75

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S561633C-N K4S561633C-P1H K4S561633C-P1L K4S561633C-P75 K4S561633C-RBL K4S561633C-RL K4S561633C-RL75
OCR Text ...o the parameter. tSHZ tC H tC L tss tSH tSLZ tOH 2.5 2.5 2.5 2.5 2.0 1.0 1 5.4 7 tSAC tC C Symbol Min 7.5 9.5 5.4 7 2.5 2.5 3 3 2.5 1.5 1 7 7 1000 - 75 Max Min 9.5 9.5 7 7 2.5 2.5 2.5 3 3 2.5 1.5 1 1000 -1H Max Min 9.5 12 25 -1L CMOS SDR...
Description From old datasheet system
IC,SDRAM,4X4MX16,CMOS,BGA,54PIN,PLASTIC
16Mx16 SDRAM 54CSP 16Mx16显示内存54CSP

File Size 58.25K  /  8 Page

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    K4S561633F K4S561633F-C K4S561633F-E K4S561633F-F1H K4S561633F-F1L K4S561633F-F75 K4S561633F-G K4S561633F-L K4S561633F-N

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S561633F K4S561633F-C K4S561633F-E K4S561633F-F1H K4S561633F-F1L K4S561633F-F75 K4S561633F-G K4S561633F-L K4S561633F-N K4S561633F-X K4S561633F-XE
OCR Text ...C tSAC tSAC tOH tOH tOH tCH tCL tss tSH tSLZ 2.5 2.5 2.5 2.5 2.0 1.0 1 5.4 7 7.5 9.5 5.4 7 2.5 2.5 3.0 3.0 2.5 1.5 1 7 7 1000 Max Min 9.5 9.5 7 7 1000 Max -1H Mobile-SDRAM -1L Unit Min 9.5 12 25 7 8 20 2.5 2.5 2.5 3.0 3.0 2.5 1.5 1 7 ...
Description 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

File Size 111.69K  /  12 Page

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    K4S56163LC K4S56163LC-RF

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S56163LC K4S56163LC-RF
OCR Text ...to the parameter. tSHZ tC H tCL tss tSH tSLZ tOH 2.5 2.5 2.5 2.5 2.0 1.0 1 5.4 7 tSAC tC C Symbol 7.5 9.5 5.4 7 2.5 2.5 3 3 2.5 1.5 1 7 7 1000 - 75 Min Max Min 9.5 9.5 7 7 2.5 2.5 2.5 3 3 2.5 1.5 1 7 8 20 1000 -1H Max Min 9.5 12 25 7 8 20 1...
Description 16Mx16 Mobile SDRAM 54CSP
CAP 680UF 50V ELECT FM RADIAL

File Size 59.21K  /  8 Page

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    K4S56163LF K4S56163LF-F1H K4S56163LF-F1L K4S56163LF-F75 K4S56163LF-G K4S56163LF-L K4S56163LF-N K4S56163LF-XE K4S56163LF-

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S56163LF K4S56163LF-F1H K4S56163LF-F1L K4S56163LF-F75 K4S56163LF-G K4S56163LF-L K4S56163LF-N K4S56163LF-XE K4S56163LF-ZC750 K4S56163LF-ZE1L0 K4S56163LF-ZN1L0
OCR Text ...C tSAC tSAC tOH tOH tOH tCH tCL tss tSH tSLZ 2.5 2.5 2.5 2.5 2.0 1.0 1 5.4 7 7.5 9.5 5.4 7 2.5 2.5 3.0 3.0 2.5 1.5 1 7 7 1000 Max Min 9.5 9.5 7 7 1000 Max -1H Mobile-SDRAM -1L Unit Min 9.5 12 25 7 8 20 2.5 2.5 2.5 3.0 3.0 2.5 1.5 1 7 ...
Description 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC 4米16 × 4银行4BOC移动SDRAM

File Size 112.21K  /  12 Page

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    K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163PF-RG K4S56163PF-RG_F90 K4S56163PF-RG_F1L K4S56163PF-RG_F75 K4S56163PF-

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163PF-RG K4S56163PF-RG_F90 K4S56163PF-RG_F1L K4S56163PF-RG_F75 K4S56163PF-RG/F90 K4S56163PF-RG/F1L K4S56163PF-RG/F75 K4S56163PF-RF750 K4S56163PF-BF900 K4S56163PF-RG750 K4S56163PF-BG750 K4S56163PF-RF900
OCR Text ...C tSAC tSAC tOH tOH tOH tCH tCL tss tSH tSLZ 2.0 2.0 2.5 2.5 2.0 1 1 6 9 7.5 12 6 9 2.0 2.0 3.0 3.0 2.0 1 1 7 9 1000 Max Min 9 12 7 9 1000 Max -90 Mobile-SDRAM -1L Unit Min 9 15 25 7 10 20 2.0 2.0 2.0 3.0 3.0 2.0 1.5 1 7 10 20 ns ns n...
Description 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
CAP 47UF 350V ELECT EB SMD

File Size 111.59K  /  12 Page

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    KU15N14

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. KU15N14
OCR Text tss KU Series SMD KU15N14 OUTLINE DIMENSIONS Case : M2F (Unit : mm) RATINGS Absolute Maximum Ratings Item Storage Temperature Junction Temperature Operating Temperature Maximum Off-State Voltage Surge On-State Current Symbol...
Description tss KU Series

File Size 122.09K  /  1 Page

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