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				Samsung semiconductor
Part No.	KMM53232000CK KMM53232000CKG
OCR Text	...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCH tWP tRWL tCWL tDS tDH tREF tWCS tCSR tCHR tRPC tCPA DRAM MODULE AC CHARACTERISTICS (0CTA70C, VCC=5.0V10%. See notes 1,2.) Test condition : Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V, out...
Description
File Size	402.45K / 20 Page	View it Online	Download Datasheet

				Samsung Semiconductor
Part No.	KMM5322204C2W
OCR Text	...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCH tWP tRWL tCWL tDS tDH tREF tWCS tCSR tCHR tRPC tCPA -6- Rev. 0.0 (Nov. 1997) DRAM MODULE Test condition : Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V, Output loading CL=100pF Paramet...
Description	2MBx32 DRAM Simm Using 1MBx16
File Size	274.94K / 17 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	TCST1300 TCUT1300X01 TCPT1300X01 TCST1030 TCST1030L CNY7009 TCST2202 TCST1230 TCST5250 TCZT8020-PAER TCST2103 TCST1103 TCST1202 TCST2300 TCRT5000L
OCR Text	...reflecting medi u m (kodak ne u tral test card) 95 10 8 0 8 0.1 1 10 100 1000 0 v f - for w ard v oltage ( v ) 96 11 8 62 i f - for w ard c u rrent (ma) 1.6 0.2 1.4 1.2 1.0 0. 8 0.6 0.4 2.0 1. 8 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 ...
Description	Reflective Optical Sensor with Transistor Output Reflective Optical Sensor with Transistor Output
File Size	261.08K / 11 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd.
Part No.	KMM372F3200CS1 KMM372F3280CS1
OCR Text	...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCS tWCH tWP tRWL tCWL tDS tDH tREF tCWD tRWD DRAM MODULE AC CHARACTERISTICS (0CTA70C, VCC=3.3V0.3V. See notes 1,2.) Parameter Column address to W delay time CAS precharge time to W...
Description	32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 32M × 72配置的DRAM内存的ECC的使6Mx4KK的刷新，3.3
File Size	507.18K / 20 Page	View it Online	Download Datasheet

				Samsung Semiconductor
Part No.	KMM5324100CK KMM5324000CK
OCR Text	...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCH tWP tRWL tCWL tDS tDH tREF tREF tWCS tCSR tCHR tRPC DRAM MODULE AC CHARACTERISTICS (0CTA70C, VCC=5.0V10%. See notes 1,2.) Test condition : Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V, Out...
Description	(KMM5324100CK / KMM5324000CK) 4MBx32 DRAM Simm Using 4MBx4
File Size	253.35K / 15 Page	View it Online	Download Datasheet

				Samsung Semiconductor
Part No.	KMM5324104CK KMM5324004CK
OCR Text	...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCH tWP tRWL tCWL tDS tDH tREF tREF tWCS tCSR tCHR tRPC DRAM MODULE AC CHARACTERISTICS (0CTA70C, VCC=5.0V10%. See notes 1,2.) Test condition : Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V, out...
Description	(KMM5324104CK / KMM5324004CK) 4MBx32 DRAM Simm Using 4MBx4
File Size	263.99K / 15 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	KMM5364003BSW KMM5364003BSWG
OCR Text	...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCH tWP tRWL tCWL tDS tDH tREF tWCS tCSR tCHR tRPC tCPA DRAM MODULE Test condition : Vih/Vil=2.6/0.8V, Voh/Vol=2.4/0.4V, output loading CL=100pF Parameter Fast page mode cycle time CA...
Description	4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
File Size	351.47K / 18 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd.
Part No.	KMM372F3200BS1 KMM372F3280BS1
OCR Text	...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCS tWCH tWP tRWL tCWL tDS tDH tREF tCWD tRWD DRAM MODULE AC CHARACTERISTICS (0CTA70C, VCC=3.3V0.3V. See notes 1,2.) Parameter Column address to W delay time CAS precharge time to W...
Description	32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 32M × 72配置的DRAM内存的ECC的使6Mx4KK的刷新，3.3
File Size	489.54K / 20 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	KMM5364003CKG KMM5364103CK KMM5364103CKG KMM5364003CK KMM5364103CKVG-5
OCR Text	...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCH tWP tRWL tCWL tDS tDH tREF tREF tWCS tCSR tCHR tRPC DRAM MODULE AC CHARACTERISTICS (0CTA70C, VCC=5.0V10%. See notes 1,2.) Test condition : Vih/Vil=2.4/0.8V, V oh/Vol=2.4/0.4V, Ou...
Description	4M X 36 FAST PAGE DRAM MODULE, 50 ns, SMA72 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K刷新V
File Size	278.03K / 17 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	KMM53232004CK KMM53232004CKG
OCR Text	...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCS tWCH tWP tRWL tCWL tDS tDH tREF tCSR tCHR tRPC tCPA DRAM MODULE AC CHARACTERISTICS (0CTA70C, Vcc=5.0V10%. See notes 1,2.) Test condition : Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V, ou...
Description	32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
File Size	453.96K / 21 Page	View it Online	Download Datasheet

For tral Found Datasheets File :: 807 Search Time::1.234ms
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