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				HITACHI[Hitachi Semiconductor]
Part No.	2SA778 2SA778A 2SA778AK 2SA778K 2SA778_K 2SA778A_K
OCR Text	... V pF MHz ns s s Unit V V A A A test conditions I C = -50 A, IE = 0 I C = -50 A, RBE = 30 k VCB = -100 V, IE = 0 VCB = -150 V, IE = 0 VEB = -5 V, IC = 0 VCE = -3 V, I E = -15 mA I C = -15 mA, I B = -1 mA I C = -15 mA, I B = -1 mA VCB = -10 ...
Description	Silicon PNP Epitaxial
File Size	41.66K / 8 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	UPD5759T6J UPD5759T6J-E4 UPD5759T6J-E4-A
OCR Text	...e specified) parameter symbol test conditi ons min. typ. max. unit circuit current i dd v dd = 2.0 v, v in = 0 v 235 310 400 a input capacitance c input v dd = 2.0 v, f = 1 mhz ? 2.0 ? pf voltage gain g v v dd = 2.0...
Description	Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone
File Size	189.44K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	UPD5758T6J UPD5758T6J-E4-A
OCR Text	...e specified) parameter symbol test conditi ons min. typ. max. unit circuit current i dd v dd = 1.5v, v in = 0 v 140 190 250 a input capacitance c input v dd = 1.5 v, f = 1 mhz ? 1.5 ? pf voltage gain g v v dd = 1.5 ...
Description	Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone
File Size	169.82K / 7 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPN11003NL
OCR Text	...lity data (i.e. reliability test report and estimated failure rate, etc). tson advance 2014-02-18 rev.3.0 tpn11003nl 2 5. 5. 5. 5. thermal characteristics thermal characteristics thermal characteristics thermal characteristics c...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	232.82K / 9 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCP8008-H
OCR Text	...iability data (i.e. reliability test report and estimated failure rate, etc). this transistor is an electrostatic-sensitive device. handle with care. unit: mm 1,2,3 source 4 gate 5,6,7,8 drain 0.8 0.05 4 5 8 ...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	203.82K / 7 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCC8005-H
OCR Text	...ability data (i.e. reliabi lity test report and estimated failure rate, etc). this transistor is an electrostatic-sensitive device. handle with care. unit: mm jedec ? jeita ? toshiba 2-3x1a weight: 0.02 g (typ.) circuit co...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	235.05K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCA8A04-H
OCR Text	...iability data (i.e. reliability test report and estimated failure rate, etc). this transistor is an electrostatic-sensitive device. handle with care. unit: mm 0.95 0.05 3.5 0.2 0.8 0.1 5 8 0.15 0.05 4 0.59...
Description	TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode
File Size	204.00K / 8 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCA8A04-H
OCR Text	...iability data (i.e. reliability test report and estimated failure rate, etc). this transistor is an electrostatic-sensitive device. handle with care. unit: mm 0.95 0.05 3.5 0.2 0.8 0.1 5 8 0.15 0.05 4 0.59...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	216.05K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
Part No.	2SB1001
OCR Text	...-1.2 -- -- Unit V V V A A test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -16 V, IE = 0 VEB = -5 V, IC = 0 VCE = -2 V, I C = -0.1 A (Pulse test) VCE(sat) VBE(sat) fT Cob V V MHz pF I C = -1 A...
Description	Silicon PNP Transistor Silicon PNP Epitaxial
File Size	31.26K / 6 Page	View it Online	Download Datasheet

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