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    LTW-E670DS

Lite-On Technology Corporation
Part No. LTW-E670DS
OCR Text ...ge which might have built up on surface of the LED's plastic lens as a result of friction between LEDs during storage and handling. ESD-damaged LEDs will exhibit abnormal characteristics such as high reverse leakage current, low forward vol...
Description Property of Lite-On Only

File Size 521.95K  /  11 Page

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    IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text surface Mount (IRF9Z14S) l Low-profile through-hole (IRF9Z14L) l 175C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l l D VDSS = -60V RDS(on) = 0.50 G S ID = -6.7A Third Generation H...
Description Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 357.87K  /  10 Page

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    IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL

IRF[International Rectifier]
Part No. IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text surface Mount (IRF9Z24S) l Low-profile through-hole (IRF9Z24L) l 175C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l l D VDSS = -60V RDS(on) = 0.28 G ID = -11A S Third Generation H...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

File Size 307.08K  /  10 Page

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text surface Mount (IRF9Z24NS) l Low-profile through-hole (IRF9Z24NL) l 175C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated Description l l D VDSS = -55V RDS(on) = 0.175 G ID = -12A S Fifth Generation...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

File Size 167.05K  /  10 Page

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    BD3150L50100AHF

Anaren Microwave
Part No. BD3150L50100AHF
OCR Text ...less chipsets in an easy to use surface mount p ackage covering the mmds and the low end of the uwb frequency ranges. the bd3150 l50100ahf is ideal for high volume manufacturing and is higher performance than traditional ceramic ...
Description Ultra Small Low Profile 0603 Balun 50 to 100 Balanced

File Size 3,291.90K  /  6 Page

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    IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR

IRF[International Rectifier]
Part No. IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text surface Mount (IRF9Z34S) l Low-profile through-hole (IRF9Z34L) l 175C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D VDSS = -60V RDS(on) = 0.14 G S ID = -18A Third Generation HEXF...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

File Size 330.76K  /  10 Page

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    IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR

IRF[International Rectifier]
Part No. IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text surface Mount (IRF9Z34NS) l Low-profile through-hole (IRF9Z34NL) l 175C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V RDS(on) = 0.10 G ID = -19A S Fifth Generation ...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 158.36K  /  10 Page

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    MA4E2532M-1113 MA4E2532M-1113T MA4E2532M-1113W MA4E2532L-1113 MA4E2532L-1113T MA4E2532L-1113W

M/A-COM Technology Solutions, Inc.
Part No. MA4E2532M-1113 MA4E2532M-1113T MA4E2532M-1113W MA4E2532L-1113 MA4E2532L-1113T MA4E2532L-1113W
OCR Text ...ic Capacitance and Inductance * surface Mountable in Microwave Circuits, No Wirebonds Required * Rugged HMIC Construction with Polyimide Scratch Protection * Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bak...
Description SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series

File Size 99.64K  /  4 Page

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    87759-1474

Molex Electronics Ltd.
Part No. 87759-1474
OCR Text ...pitch milli-grid? header, surface mount, vertical, 14 circuits, 0.38m (15") gold (au) selective plating, without press-fit plastic pegs, with pick-and-place cap, tape and reel packaging, lead-fr...
Description 2.00mm (.079) Pitch Milli-Grid Header, surface Mount, Vertical, 14 Circuits, 0.38μm (15μ) Gold (Au) Selective Plating, without Press-fit Plastic Pegs, with Pick-and-Place Cap

File Size 421.28K  /  8 Page

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    MA4HYB390-1303T

M/A-COM Technology Solutions, Inc.
Part No. MA4HYB390-1303T
OCR Text surface Mount 90 Hybrid 3650 - 4050 MHz Features * * * * * * * Monolithic Construction 400 MHz B.W. Excellent Phase Balance ( < +/- 3 deg ) Decent Amplitude Balance ( <+/- 1.4 dB ) Output Port to Port Isolation > 20 dB 2mm Low Cost MLP Pl...
Description surface Mount 90° Hybrid 3650 - 4050 MHz
surface Mount 90隆? Hybrid 3650 - 4050 MHz

File Size 86.07K  /  5 Page

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