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  segr Datasheet PDF File

For segr Found Datasheets File :: 353    Search Time::1.422ms    
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Part No. FSGYC065D1 FSGYC065R3 FSGYC065R4
OCR Text segr resistant n-channel power mosfet fairchild star*power? rad hard mosfets have been specifically developed for high performance applications in a commercial or military space environment. star*power mosfets offer the system designe...
Description TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | SMT

File Size 104.96K  /  7 Page

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    FAIRCHILD SEMICONDUCTOR CORP
Part No. FSPJ260D1
OCR Text segr resistant n-channel power mosfets fairchild star*power? rad hard mosfets have been specifically developed for high performance applications in a commercial or military space environment. star*power mosfets offer the system design...
Description 55 A, 200 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA

File Size 108.69K  /  9 Page

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    FSYA450D FSYA450D1 FSYA450D3 FSYA450R4 FSYA450R1 FSYA450R3

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSYA450D FSYA450D1 FSYA450D3 FSYA450R4 FSYA450R1 FSYA450R3
OCR Text segr Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to...
Description Radiation Hardened/ segr Resistant N-Channel Power MOSFETs
Radiation Hardened, segr Resistant N-Channel Power MOSFETs 11 A, 500 V, 0.53 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 55.83K  /  8 Page

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. JANSR2N7410 FN4500
OCR Text ...EE), Single Event Gate Rupture (segr) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military appli...
Description 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3.5A 100V 0.600 Ohm Rad Hard N-Channel Power MOSFET
3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET

File Size 44.85K  /  8 Page

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    FSYC163D FSYC163D1 FSYC163D3 FN4740 FSYC163R4 FSYC163R FSYC163R1 FSYC163R3

INTERSIL[Intersil Corporation]
Part No. FSYC163D FSYC163D1 FSYC163D3 FN4740 FSYC163R4 FSYC163R FSYC163R1 FSYC163R3
OCR Text segr Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to...
Description Radiation Hardened/ segr Resistant N-Channel Power MOSFETs
From old datasheet system
Radiation Hardened, segr Resistant N-Channel Power MOSFETs

File Size 61.08K  /  8 Page

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    FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FSL9230R3 FN4084 FSL9230R4

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FSL9230R3 FN4084 FSL9230R4
OCR Text segr Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhance...
Description 3A, -200V, 1.50 Ohm, Rad Hard, segr Resistant, P-Channel Power MOSFETs 3A 200V的电压,1.50欧姆,拉德硬,segr性,P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, segr Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ segr Resistant/ P-Channel Power MOSFETs

File Size 45.44K  /  8 Page

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    FAIRCHILD SEMICONDUCTOR CORP
Part No. FSPL230D1 FSPL230F4
OCR Text segr resistant n-channel power mosfets fairchild star*power rad hard mosfets have been specifically developed for high performance applications in a commercial or military space environment. star*power mosfets offer the system designe...
Description 9 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

File Size 89.12K  /  7 Page

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For segr Found Datasheets File :: 353    Search Time::1.422ms    
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