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  sat Datasheet PDF File

For sat Found Datasheets File :: 43317    Search Time::1.297ms    
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    Panasonic
Part No. 2SC4691G
OCR Text ...emitter saturation voltage v ce(sat) ? ss-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing absolute maximum ratings t a = 25 c parameter symbol conditions min typ max unit colle...
Description Silicon NPN epitaxial planar type

File Size 223.49K  /  4 Page

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    2SA921

PANASONIC[Panasonic Semiconductor]
Part No. 2SA921
OCR Text ...BO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT NV Conditions VCB = -50V, IE = 0 VCE = -50V, IB = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -5V, IC = -2mA IC = -20mA, IB = -2mA VCB = -5V, IE = 2mA, f = 200MHz VCE = -40V, IC = -1...
Description Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

File Size 36.24K  /  2 Page

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    MAGX-000035-01500P MAGX-000035-01500P-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
Part No. MAGX-000035-01500P MAGX-000035-01500P-15
OCR Text ... 14 db saturated power (p sat ) 18 16.5 15 14 w power gain at p sat 22 18 14 11 db pae @ p sat 75 68 60 55 % 5. typical rf performance measured in m/a - com technology solutions rf evaluation boa...
Description GaN Wideband 15 W Pulsed Transistor in Plastic Package

File Size 1,070.97K  /  10 Page

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    MAGX-000035-01000P-V2 MAGX-000035-01000P-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
Part No. MAGX-000035-01000P-V2 MAGX-000035-01000P-15
OCR Text ... 14 db saturated power (p sat ) 13 11 10 10 w power gain at p sat 15 14 13 12 db pae @ p sat 65 55 53 50 % 5. electrical specifications measured in macom rf evaluation boards. see recommended tun...
Description GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package

File Size 1,122.96K  /  10 Page

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    2SB1001

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2SB1001
OCR Text ... C = -0.1 A (Pulse test) VCE(sat) VBE(sat) fT Cob V V MHz pF I C = -1 A, I B = -0.1 A (Pulse test) I C = -1 A, I B = -0.1 A (Pulse test) VCE = -2 V, I C = -10 mA VCB = -10 V, IE = 0, f = 1 MHz 1. The 2SB1001 is grouped by hFE as...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 31.26K  /  6 Page

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    2SB1002

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2SB1002
OCR Text ... VCE = -2 V, IC = -0.1 A VCE(sat) VBE(sat) fT Cob V V MHz pF I C = -1 A, I B = -0.1 A (Pulse test) I C = -1 A, I B = -0.1 A (Pulse test) VCE = -2 V, I C = -10 mA (Pulse test) VCB = -10 V, IE = 0, f = 1 MHz 1. The 2SB1002 is grou...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 30.84K  /  6 Page

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    2SB1011 B1011

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1011 B1011
OCR Text ...-emitter saturation voltage VCE(sat) 3.160.1 3.80.3 11.00.5 1.90.1 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector ope...
Description 2SB1011
Silicon PNP triple diffusion planar type

File Size 77.42K  /  4 Page

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    2SB1012 2SB1012K 2SB1012_K

HITACHI[Hitachi Semiconductor]
Part No. 2SB1012 2SB1012K 2SB1012_K
OCR Text ...ime Note: 1. Pulse test hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off 2 2SB1012(K) Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) -3 -1.0 -0.3 DC (T C Area of Safe Operation iC (peak) IC (ma...
Description Silicon PNP Epitaxial

File Size 32.59K  /  6 Page

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    New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
Part No. D43C D43C1 D43C10 D43C11 D43C6 D43C2 D43C8 D43C9 D43C3 D43C5 D43C7
OCR Text ...= -1a, ib = -100ma) hfe hfe vce(sat) vce(sat) vbe(sat) 25 40 40 10 20 20 ? ? ? ? ? 120 120 ? -0.5 -05 -05 -1.3 " volts volts volts dynamic characteristics collector capacitance (vcb = -10v,f = 1mhz) current-gain ? bandwidth product (ic = -2...
Description High free-air power dissipation

File Size 693.38K  /  2 Page

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For sat Found Datasheets File :: 43317    Search Time::1.297ms    
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