S29GL064M90TBIR10 pdf Datasheet P1 Part Num --- IC-ON-LINE


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S29GL064M90TBIR10 Datasheet PDF File

For S29GL064M90TBIR10 Found Datasheets File :: 2+ Page :: | <1> |

					Spansion Inc. Spansion, Inc. SPANSION LLC
Part No.	S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCIR03 S29GL064M90FCIR10 S29GL064M90FCIR12 S29GL064M90FCIR13 S29GL064M90FCIR20 S29GL256M10TAIR13 S29GL064M90TDIR13 S29GL064M90TDIR00 S29GL064M90TDIR02 S29GL064M90TDIR03 S29GL064M90TDIR10 S29GL064M90TDIR12 S29GL064M90FDIR33 S29GL064M90TBIR33 S29GL064M90TBIR32 S29GL064M90TFIR23 S29GL256M10TFIR23 S29GL064M90BCIR13 S29GL064M90BDIR10 S29GL064M90BDIR12 S29GL064M90FBIR20 S29GL064M90BDIR22 S29GL064M90FBIR22 S29GL064M90FDIR03 S29GL064M90BDIR33 S29GL064M90BDIR02 S29GL064M90BDIR32 S29GL064M90BDIR23 S29GL064M90TBIR22 S29GL064M90TBIR23 S29GL064M90TCIR20 S29GL064M90TBIR10 S29GL064M90BFIR10 S29GL064M90BFIR20 S29GL128M90TDIR82 S29GL064M90FAIR12 S29GL064M90FAIR10 S29GL128M90TFIR82 S29GL256M10TAIR20 S29GL128M90TAIR13 S29GL128M90TDIR12 S29GL128M90TAIR10 S29GL128M90FDIR22 S29GL064M90BCIR23 S29GL064M90FBIR03 S29GL256M10TFIR20 S29GL064M90BFIR00 S29GL064M90BDIR13 S29GL064M90TDIR22 SPANSIONINC.-S29GL064M90BFIR10 SPANSIONLLC-S29GL064M90TBIR20 S29GL064M90FFIR23 SPANSIONLLC-S29GL064M90FFIR32
Description	MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2) MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L) MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
File Size	2,173.74K / 160 Page	View it Online	Download Datasheet

HUA FENG CIRCUIT

					SPANSION[SPANSION]
Part No.	S29GL064M90TAIR12 S29GL064M90TAIR40 S29GL064M90TAIR42 S29GL064M90TAIR43 S29GL064M90TAIR73 S29GL064M90TAIR82 S29GL064M90TAIR90 S29GL064M90TAIR92 S29GL064M90TBIR00 S29GL-M S29GL256M S29GL032M10TAIR20 S29GL032M10TAIR22 S29GL032M10TAIR23 S29GL064M90TAIR02 S29GL064M90TAIR03 S29GL064M90TAIR10 S29GL064M90TAIR13 S29GL064M90TAIR30 S29GL064M90TAIR32 S29GL064M90TAIR33 S29GL064M90TAIR70 S29GL064M90TAIR72 S29GL064M90TAIR80 S29GL064M90TAIR83 S29GL064M90TAIR93 S29GL064M90TBIR02 S29GL064M90TBIR03 S29GL064M90TBIR10 S29GL064M90TBIR12 S29GL064M90TBIR13 S29GL064M90TBIR30 S29GL064M90TBIR32 S29GL064M90TBIR33 S29GL032M S29GL064M90TAIR00 S29GL032M10TFIR40 S29GL032M10TFIR42 S29GL032M10TFIR43 S29GL128M S29GL032M10BACR00 S29GL032M10BACR02 S29GL032M10BACR03 S29GL032M10BACR20 S29GL032M10BACR22 S29GL032M10BACR23 S29GL032M10BACR30 S29GL032M10BACR32 S29GL032M10BACR33 S29GL032M10BACR40 S29GL032M10BACR42 S29GL032M10BACR43 S29GL032M10BAIR00 S29GL032M10BAIR02 S29GL032M10BAIR03 S29GL032M10BAIR20 S29GL032M10BAIR22 S29GL032M10BAIR23 S29GL032M10BAIR30 S29GL032M10BAIR32 S29GL032M10BAIR33 S29GL032M10BAIR40 S29GL032M10BAIR42 S29GL032M10BAIR43 S29GL032M10BBCR00 S29GL032M10BBCR02 S29GL032M10BBCR03 S29GL032M10BBCR20 S29GL032M1
Description	256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology
File Size	1,708.54K / 116 Page	View it Online	Download Datasheet

For S29GL064M90TBIR10 Found Datasheets File :: 2+ Page :: | <1> |

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