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For rads Found Datasheets File :: 810    Search Time::1.484ms    
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    IRHN9230

IRF[International Rectifier]
Part No. IRHN9230
OCR Text ...radiation doses as high as 10 5 rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier's P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 rads (Si) total dose. No compe...
Description TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)

File Size 87.57K  /  4 Page

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    IRHNJ53230 IRHNJ58230 IRHNJ54230 IRHNJ57230

IRF[International Rectifier]
Part No. IRHNJ53230 IRHNJ58230 IRHNJ54230 IRHNJ57230
OCR Text ...Radiation Level IRHNJ57230 100K rads (Si) IRHNJ53230 300K rads (Si) IRHNJ54230 600K rads (Si) IRHNJ58230 1000K rads (Si) RDS(on) 0.20 0.20 0.20 0.25 ID 13A 13A 13A 13A IRHNJ57230 200V, N-CHANNEL 4# TECHNOLOGY c SMD-0.5 In...
Description 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

File Size 123.99K  /  8 Page

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    JANSR2N7468U2

International Rectifier
Part No. JANSR2N7468U2
OCR Text ...art number irhna57064 100k rads (si) 0.0056 ? 75a* jansr2n7468u2 irhna53064 300k rads (si) 0.0056 ? 75a* jansf2n7468u2 irhna54064 500k rads (si) 0.0056 ? 75a* jansg2n7468u2 irhna58064 1000k rads (si) 0....
Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
   RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

File Size 178.18K  /  8 Page

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    IRHF67230

International Rectifier
Part No. IRHF67230
OCR Text ... i d irhf67230 100k rads (si) 0.145 ? 9.1a irhf63230 300k rads (si) 0.145 ? 9.1a for footnotes refer to the last page pre-irradiation radiation hardened irh...
Description Power MOSFET

File Size 223.38K  /  9 Page

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    2N7627UC

International Rectifier
Part No. 2N7627UC
OCR Text ... i d irhluc7970z4 100k rads (si) 1.60 ? -0.65a irhluc7930z4 300k rads (si) 1.60 ? -0.65a absolute maximum ratings (per die) parameter units i d @ v gs = -4.5v, t c = 25c ...
Description Power MOSFET

File Size 224.43K  /  9 Page

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    UT54ACS191

ETC
Part No. UT54ACS191
OCR Text ...er limit units total dose 1.0e6 rads(si) seu threshold 2 80 mev-cm 2 /mg sel threshold 120 mev-cm 2 /mg neutron fluence 1.0e14 n/cm 2 symbol parameter limit units v dd supply voltage -0.3 to 7.0 v v i/o voltage any pin -.3 to v dd +.3 v ...
Description Synchronous 4-Bit Up-Down Binary Counters

File Size 87.39K  /  6 Page

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    IRHN7450SE

IRF[International Rectifier]
Part No. IRHN7450SE
OCR Text ...al specifications up to 1 x 105 rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 rads (Si)/Sec, and return to normal opera...
Description TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A)

File Size 80.82K  /  4 Page

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    IRHM8450 IRHM7450

IRF[International Rectifier]
Part No. IRHM8450 IRHM7450
OCR Text ...diaition doses as high as 1x106 rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 rads (Si) total dose. No compensation i...
Description RADIATION HARDENED POWER MOSFET
REPETITIVE AVALANCHE AND dv/dt RATED

File Size 307.49K  /  12 Page

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    2N7609U8 IRHLNM73110 IRHLNM77110

International Rectifier
Part No. 2N7609U8 IRHLNM73110 IRHLNM77110
OCR Text ... i d irhlnm77110 100k rads (si) 0.29 ? 6.5a irhlnm73110 300k rads (si) 0.29 ? 6.5a for footnotes refer to the last page smd-0.2 features: 5v cmos and ttl compatible fast switching si...
Description RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
   RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT

File Size 170.92K  /  9 Page

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