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For radar Found Datasheets File :: 2910    Search Time::1.64ms    
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    Magnetrol International, Inc.
Part No. R82
OCR Text .../wastewater tanks and sumps r82 radar transmitter agitator blade shaft fill pipe turbulent process ladder and fill pipe obstacles visible vapors aerated process; in-tank air movement housing covers top left: cast aluminum with a tempered ...
Description Introducing Full-featured Level Transmitters with a User-friendly Price Point.

File Size 571.22K  /  6 Page

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    N5454A

Agilent(Hewlett-Packard)
Part No. N5454A
OCR Text ...nts, laser pulse measurements, radar burst measurements, and packetized serial bus measurements. even in applications that dont actually require segmented memory acquisition to optimize memory, using segmented memory acquisition on ...
Description Segmented Memory Acquisition or Agilent InfiniiVision

File Size 825.51K  /  12 Page

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    BLS6G3135-12008 BLS6G3135-120-15

NXP Semiconductors
Part No. BLS6G3135-12008 BLS6G3135-120-15
OCR Text radar power transistor Rev. 02 -- 29 May 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Ty...
Description LDMOS S-Band radar power transistor

File Size 69.99K  /  12 Page

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    1214-550P

Microsemi Corporation
Part No. 1214-550P
OCR Text radar Application 550 Watts - 300s, 10%, +42V L-Band Pulsed radar 1200 - 1400 MHz * * * * Easy To Use - 50 Plug-and-Play Reduce Design Cycle Time Improve System Performance Reduce System Size and Components GENERAL DESCRIPTION ...
Description 550 Watts - 300楼矛s, 10%, 42V L-Band Pulsed radar 1200 - 1400 MHz
550 Watts - 300μs, 10%, 42V L-Band Pulsed radar 1200 - 1400 MHz

File Size 80.14K  /  2 Page

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    HVV1214-025S

HVVi Semiconductors, Inc.
Part No. HVV1214-025S
OCR Text radar Pulsed Power Transistor 1200-1400 MHz, 200s Pulse, 10% Duty DESCRIPTION The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the fre...
Description L-Band radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty
L-Band radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty

File Size 222.28K  /  2 Page

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    HVV1214-025

HVVi Semiconductors, Inc.
Part No. HVV1214-025
OCR Text radar L-Band radar Pulsed Power Transistor HVV1214-075 Pulsed Power Transistor 1200-1400 HVV1214-025 MHz, 200!s Pulse, 10% Duty The innovative Semiconductor Company! Pulsed Power Transistor 1200-1400 MHz, 200!s Pulse, 10% Duty L-Band radar ...
Description L-Band radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based radar Applications
L-Band radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based radar Applications

File Size 642.96K  /  2 Page

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    2731-200P

Microsemi Corporation
Part No. 2731-200P
OCR Text radar Application 200 Watts - 200s, 10%, 36V S-Band Pulsed radar 2700 - 3100 MHz * * * * Easy To Use - 50 Plug-and-Play Reduce Design Cycle Time Improve System Performance Reduce System Size and Components GENERAL DESCRIPTION T...
Description 200 Watts - 200渭s, 10%, 36V S-Band Pulsed radar 2700 - 3100 MHz

File Size 358.36K  /  2 Page

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    BLS6G3135-20 BLS6G3135S-20

NXP Semiconductors
Part No. BLS6G3135-20 BLS6G3135S-20
OCR Text radar power transistor Rev. 03 -- 3 March 2009 Product data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Ty...
Description LDMOS S-Band radar power transistor

File Size 69.16K  /  12 Page

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    PHA3135-130M

M/A-COM Technology Solutions, Inc.
Part No. PHA3135-130M
OCR Text radar Pulsed Power Module 115, 130, 145W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Features * * * * * . NPN silicon bipolar transistor Input and output matched to 50 Duroid circuit board Easily combined for high power transmitters Plated copper...
Description radar Pulsed Power Module

File Size 61.80K  /  3 Page

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    BLL1214-250R

NXP Semiconductors N.V.
Part No. BLL1214-250R
OCR Text radar power transistor Rev. 01 -- 4 February 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a cerami...
Description L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor

File Size 122.69K  /  12 Page

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