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Samtec, Inc.
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| Part No. |
SPW17N80C2
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| OCR Text |
power transistor c power semiconductors o o l mos feature new revolutionary high voltage technology worldwide best r ds ( on ) in to 2...limited by t jmax i d puls 51 avalanche energy, single pulse i d =4a, v dd =50v e as 670 mj avalan... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 17A I(D) | TO-247VAR 晶体管| MOSFET的| N沟道| 800V的五（巴西）直| 17A条（丁）|47VAR
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| File Size |
140.00K /
11 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT30M30LFLL APT30M30B2FLL
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| OCR Text |
POWER MOS 7
(R)
R
FREDFET
B2FLL
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOS...limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL... |
| Description |
POWER MOS 7 FREDFET
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| File Size |
149.53K /
5 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT40GP90B
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| OCR Text |
POWER MOS 7 IGBT
(R)
TO-247
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this...limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leaka... |
| Description |
POWER MOS 7 IGBT
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| File Size |
162.08K /
6 Page |
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it Online |
Download Datasheet |
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Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT20M26WVR
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| OCR Text |
POWER MOS V (R)
TO-267
Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minim...limited by lead temperature.
1 Repetitive Rating: Pulse width limited by maximum T j 2 Pulse Test... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 65A 0.026 Ohm
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| File Size |
62.86K /
4 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT20M18B2VR_04 A20M18LVR APT20M18B2VR APT20M18B2VR04
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| OCR Text |
POWER MOS V
(R)
MOSFET
B2VR
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This ne...limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL... |
| Description |
POWER MOS V MOSFET
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| File Size |
150.70K /
4 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT20M18B2VFR_04 A20M18LVFR APT20M18B2VFR APT20M18B2VFR04
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| OCR Text |
POWER MOS V(R) FREDFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology min...limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL... |
| Description |
POWER MOS V FREDFET
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| File Size |
151.70K /
4 Page |
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it Online |
Download Datasheet |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
SUD70N03-04P
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| OCR Text |
power mosfet 175 c junction temperature optimized for low-side synchronous rectifier operation 100% r g tested applications dc/dc...limited by package. www.freescale.net.cn 1 / 5 30 v (d-s) 175 c mosfet n-... |
| Description |
N-Channel 30 V (D-S) 175 °C MOSFET
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| File Size |
406.46K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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