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For php8n50e Found Datasheets File :: 7    Search Time::0.844ms    
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    PHP8N50E PHW8N50E PHB8N50E

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. php8n50e PHW8N50E PHB8N50E
OCR Text ...nce * Low thermal resistance php8n50e, PHB8N50E, PHW8N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 8.5 A RDS(ON) 0.85 s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended fo...
Description PowerMOS transistors Avalanche energy rated

File Size 90.22K  /  10 Page

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    PHX5N50E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHX5N50E
OCR Text php8n50e GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performanc...
Description PowerMOS transistor Isolated version of php8n50e

File Size 20.15K  /  5 Page

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    PHW8ND50E PHB8ND50E PHP8ND50E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHW8ND50E PHB8ND50E PHP8ND50E
OCR Text ...d(off) tf tr 1 VDS tp ID php8n50e 1E-05 1E-04 Avalanche time, tp (s) 1E-03 1E-02 td(on) 10 0 10 20 30 40 RG, Gate resistance (Ohms) 50 60 0.1 1E-06 Fig.14. Typical switching times; td(on), tr, td(off), tf = f(RG) Fig.17....
Description PowerMOS transistors FREDFET, Avalanche energy rated

File Size 90.34K  /  10 Page

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    PHX8N50E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHX8N50E
OCR Text ...= 25 C 100V VDD = 400 V 200V php8n50e 15 10 150 C 5 Tj = 25 C 0 20 40 Gate charge, QG (nC) 60 80 0 0 0.2 0.4 0.6 0.8 1 VSDS, Source-Drain voltage (Volts) 1.2 1.4 Fig.13. Typical turn-on gate-char...
Description PowerMOS transistors Avalanche energy rated

File Size 74.46K  /  8 Page

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    PHX8ND50E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHX8ND50E
OCR Text ...d(off) tf tr 1 VDS tp ID php8n50e 1E-05 1E-04 Avalanche time, tp (s) 1E-03 1E-02 td(on) 10 0 10 20 30 40 RG, Gate resistance (Ohms) 50 60 0.1 1E-06 Fig.14. Typical switching times; td(on), tr, td(off), tf = f(RG) Fig.17....
Description PowerMOS transistors FREDFET, Avalanche energy rated

File Size 56.56K  /  8 Page

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    IRF840

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. IRF840
OCR Text ...= 25 C 100V VDD = 400 V 200V php8n50e 15 10 150 C 5 Tj = 25 C 0 20 40 Gate charge, QG (nC) 60 80 0 0 0.2 0.4 0.6 0.8 1 VSDS, Source-Drain voltage (Volts) 1.2 1.4 Fig.13. Typical turn-on gate-char...
Description PowerMOS transistor Avalanche energy rated

File Size 55.58K  /  7 Page

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