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飞思卡尔半导体(中国)有限公司
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| Part No. |
mrf6s18100nbr1
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| OCR Text |
mrf6s18100nbr1 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for gsm and gsm edge base station applications with frequencies from 1800 to 2000 mhz. suit... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外
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| File Size |
703.35K /
20 Page |
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it Online |
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MOTOROLA
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| Part No. |
MRF6S18100N
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| OCR Text |
... 13 inch Reel.
MRF6S18100NR1 mrf6s18100nbr1
1805- 1990 MHz, 100 W, 28 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs
CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 MRF6S18100NR1
CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 mrf6s18100nbr1... |
| Description |
The MRF6S18100NR1 and mrf6s18100nbr1 are designed for GSM
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| File Size |
693.63K /
20 Page |
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it Online |
Download Datasheet |
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