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飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF5S21100HR3 mrf5s21100hsr3
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| OCR Text |
mrf5s21100hsr3 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for w - cdma base station applications with frequencies from 2110 to 2170 mhz. suitable for ... |
| Description |
To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
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| File Size |
375.20K /
12 Page |
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it Online |
Download Datasheet
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Freescale (Motorola)
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| Part No. |
MRF5S21100H MRF5S21100HR3 mrf5s21100hsr3
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| OCR Text |
mrf5s21100hsr3 motorola rf device data the rf mosfet line rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for w - cdma base station applications with frequencies from 2110 to 2170 mhz. suitable fo... |
| Description |
MRF5S21100HR3, mrf5s21100hsr3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
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| File Size |
562.24K /
12 Page |
View
it Online |
Download Datasheet |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
mrf5s21100hsr3 MRF5S21100HR3
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| OCR Text |
... 13 inch Reel.
MRF5S21100HR3 mrf5s21100hsr3
2110 - 2170 MHz, 23 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF5S21100HR3
CASE 465A - 06, STYLE 1 NI - 780S mrf5s21100hsr3
Tab... |
| Description |
To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
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| File Size |
388.49K /
12 Page |
View
it Online |
Download Datasheet |
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