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ONSEMI[ON Semiconductor]
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Part No. |
MGW12N120
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Description |
Insulated Gate Bipolar Transistor N-Channel Insulated Gate Bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
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File Size |
133.06K /
5 Page |
View
it Online |
Download Datasheet
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
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Part No. |
MGW12N120D
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Description |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
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File Size |
250.62K /
6 Page |
View
it Online |
Download Datasheet
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