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  K4H560838E-VCB0 Datasheet PDF File

For K4H560838E-VCB0 Found Datasheets File :: 42+       Page :: | <1> | 2 | 3 | 4 | 5 |   

    SAMSUNG[Samsung semiconductor]
Part No. K4H560838E-VLB3 K4H560438E-VC K4H560438E-VC_LA2 K4H560438E-VC_LB0 K4H560438E-VC_LB3 K4H560438E-VCA2 K4H560438E-VCB0 K4H560438E-VCB3 K4H560438E-VLA2 K4H560438E-VLB0 K4H560438E-VLB3 K4H560838E-VC_LA2 K4H560838E-VC_LB0 K4H560838E-VC_LB3 K4H560838E-VCA2 K4H560838E-VCB0 K4H560838E-VCB3 K4H560838E-VLA2 K4H560838E-VLB0
Description 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant)

File Size 294.46K  /  23 Page

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HUA FENG CIRCUIT





    K4H560838E-VC/LB3 K4H560438E-VC/LB3 K4H560438E-VC/LA2 K4H560838E-VC/LA2 K4H560438E-VC/LB0 K4H560838E-VC/LB0 K4H560838E-V

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H560838E-VC/LB3 K4H560438E-VC/LB3 K4H560438E-VC/LA2 K4H560838E-VC/LA2 K4H560438E-VC/LB0 K4H560838E-VC/LB0 K4H560838E-VCA2 K4H560438E-VCA2 K4H560438E-VLB3 K4H560838E-VCB3 K4H560438E-VLB0 K4H560438E-VLA2 K4H560438E-VCB3 K4H560838E-VLB0 K4H560838E-VLA2 K4H560838E-VCB0 K4H560438E-VCB0 K4H560838E-VLB3
Description 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) 256Mb的电子芯片DDR SDRAM内存规格54 sTSOP与铅二无(符合RoHS

File Size 299.00K  /  23 Page

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    K4H560838E-GCCC K4H560838E-GCC4

Samsung semiconductor
Part No. K4H560838E-GCCC K4H560838E-GCC4
Description    256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)

File Size 198.99K  /  18 Page

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    VCB01NC1 VCB11NC1 VCB01NC2 VCB11NC2

JDS Uniphase Corporation
Part No. VCB01NC1 VCB11NC1 VCB01NC2 VCB11NC2
Description Voltage-Controlled Optical Attenuators

File Size 129.08K  /  4 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K9E2G08B0M-FIB0 K9E2G08B0M-Y K9E2G08B0M-YCB0 K9E2G08B0M-YIB0 K9E2G08B0M-P K9E2G08B0M-PCB0 K9E2G08B0M-VCB0 K9E2G08B0M-VIB0 K9E2G08B0M-FCB0 K9E2G08B0M-PIB0
Description 256M x 8 Bits NAND Flash Memory

File Size 893.70K  /  38 Page

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    K9E2G08B0M K9E2G08B0M-F K9E2G08B0M-FCB0 K9E2G08B0M-FIB0 K9E2G08B0M-P K9E2G08B0M-PCB0 K9E2G08B0M-PIB0 K9E2G08B0M-V K9E2G0

Samsung semiconductor
Part No. K9E2G08B0M K9E2G08B0M-F K9E2G08B0M-FCB0 K9E2G08B0M-FIB0 K9E2G08B0M-P K9E2G08B0M-PCB0 K9E2G08B0M-PIB0 K9E2G08B0M-V K9E2G08B0M-VCB0 K9E2G08B0M-VIB0 K9E2G08B0M-Y K9E2G08B0M-YCB0 K9E2G08B0M-YIB0
Description 256M x 8 Bits NAND Flash Memory

File Size 886.25K  /  38 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4H560838E-GCCC K4H560438E-GCC4 K4H560438E-GCCC K4H560838E-GCC4
Description DIODE ZENER SINGLE 300mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-23 3K/REEL 256Mb的电子芯片的DDR 400内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-23 3K/REEL
256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)

File Size 195.42K  /  18 Page

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    JDS Uniphase, Corp.
JDS UNIPHASE CORP
Part No. VCB11NC1.0FP1.0NC VCB01NC2.0FP1.0NC VCB11NC1.0FP2.0NC VCB01NC2.0FP2.0NC VCB01NC1.0SC1.0SC VCB01NC1.0SC1.0SU VCB01NC1.0SC2.0SC VCB01NC1.0SC2.0SU VCB01NC2.0NC2.0FP VCB01NC2.0NC2.0SU VCB11NC2.0NC2.0FP VCB11NC2.0NC2.0SC
Description FIBER OPTIC FIXED ATTENUATOR, 1525-1575nm, SC/HPC CONNECTOR
FIBER OPTIC FIXED ATTENUATOR, 1525-1575nm, SC/APC CONNECTOR
FIBER OPTIC FIXED ATTENUATOR, 1525-1575nm, FC/HPC CONNECTOR

File Size 141.78K  /  4 Page

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    Samsung Semiconductor Co., Ltd.
Part No. K4H560438E-ZLB30 K4H560838E-ZLB30
Description 64M X 4 DDR DRAM, 0.7 ns, PBGA60 ROHS COMPLIANT, FBGA-60
32M X 8 DDR DRAM, 0.7 ns, PBGA60 ROHS COMPLIANT, FBGA-60

File Size 385.02K  /  24 Page

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    K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/LB3 K4H560438E-GC/LA2 K4H560438E-GC/LB0 K4H560438E-GC/LB3 K4H560438E-G

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
Part No. K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/LB3 K4H560438E-GC/LA2 K4H560438E-GC/LB0 K4H560438E-GC/LB3 K4H560438E-GLB0 K4H560438E-GLB3 K4H560438E-GCB3 K4H560438E-GCA2 K4H560838E-GCA2 K4H560438E-GCB0 K4H560838E-GCB0 K4H560838E-GLB0 K4H560838E-GLB3 K4H560838E-GLA2
Description DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装(x4/x8
DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
   256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)

File Size 245.98K  /  24 Page

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