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  j-bend Datasheet PDF File

For j-bend Found Datasheets File :: 2078    Search Time::0.859ms    
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    SMBG5356B SMBJ5356B SMBG5364B SMBJ5349B SMBJ5339B SMBG5339B SMBJ5345B SMBG5381B SMBG5376B SMBG5378B SMBJ5334B SMBJ5335B

MCC[Micro Commercial Components]
Part No. SMBG5356B SMBJ5356B SMBG5364B SMBJ5349B SMBJ5339B SMBG5339B SMBJ5345B SMBG5381B SMBG5376B SMBG5378B SMBJ5334B SMBJ5335B SMBJ5333B SMBJ5388B SMBG5333B SMBG5334B SMBG5335B SMBG5336B SMBG5337B SMBG5338B SMBG5340B SMBG5341B SMBG5342B SMBG5343B SMBG5344B SMBG5345B SMBG5346B SMBG5347B SMBG5348B SMBG5349B SMBG5350B SMBG5351B SMBG5352B SMBG5353B SMBG5354B SMBG5355B SMBG5357B SMBG5358B SMBG5359B SMBG5360B SMBG5361B SMBG5362B SMBG5363B SMBG5365B SMBG5366B SMBG5367B SMBG5368B SMBG5369B SMBG5370B SMBG5371B SMBG5372B SMBG5373B SMBG5374B SMBG5375B SMBG5377B SMBG5379B SMBG5380B SMBG5382B SMBG5383B SMBG5384B SMBG5385B SMBG5386B SMBG5387B SMBG5388B SMBJ5336B SMBJ5337B SMBJ5338B SMBJ5340B SMBJ5341B SMBJ5342B SMBJ5343B SMBJ5344B SMBJ5346B SMBJ5347B SMBJ5348B SMBJ5350B SMBJ5351B SMBJ5352B SMBJ5353B SMBJ5354B SMBJ5355B SMBJ5357B SMBJ5358B SMBJ5359B SMBJ5360B SMBJ5361B SMBJ5362B SMBJ5363B SMBJ5364B SMBJ5365B SMBJ5366B SMBJ5367B SMBJ5368B SMBJ5369B SMBJ5370B SMBJ5371B SMBJ5372B SMBJ5373B SMBJ5374B SMBJ5375B SMBJ5376B SMBJ5377B SMBJ5378B SMBJ5379B SMBJ5380B SMBJ5381B SMBJ5382B SMBJ5383B SMBJ5384B SMBJ5385B SMBJ5386B SMBJ5387B
OCR Text ...s gull-wing or c-bend (modified j-bend) tin-lead plated and solderable per MIL-STD-750, method 2026 Polarity is indicated by cathode band o Maximum temperature for soldering: 260 C for 10 seconds. DO-214AA (SMBJ) (Round Lead) H Cathode ...
Description 5 Watt Surface Mount Silicon Zener Diodes

File Size 738.99K  /  4 Page

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    APT12045L2VR

ADPOW[Advanced Power Technology]
Part No. APT12045L2VR
OCR Text ...= 9.46mH, R = 25W, Peak I = 26A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.91K  /  2 Page

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    IDT71256 IDT71256L IDT71256L100D IDT71256L100DB IDT71256L100L IDT71256L100LB IDT71256L100P IDT71256L100PB IDT71256L100TD

INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Technolog...
Part No. IDT71256 IDT71256L IDT71256L100D IDT71256L100DB IDT71256L100L IDT71256L100LB IDT71256L100P IDT71256L100PB IDT71256L100TD IDT71256L100TDB IDT71256L100Y IDT71256L100YB IDT71256L120D IDT71256L120DB IDT71256L120L IDT71256L120LB IDT71256L120P IDT71256L120PB IDT71256L120TD IDT71256L120TDB IDT71256L120Y IDT71256L120YB IDT71256L150D IDT71256L150DB IDT71256L150L IDT71256L150LB IDT71256L150P IDT71256L150PB IDT71256L150TD IDT71256L150TDB IDT71256L150Y IDT71256L150YB IDT71256L20D IDT71256L20DB IDT71256L20L IDT71256L20LB IDT71256L20P IDT71256L20PB IDT71256L20TD IDT71256L20TDB IDT71256L20Y IDT71256L20YB IDT71256L25D IDT71256L25DB IDT71256L25L IDT71256L25LB IDT71256L25P IDT71256L25PB IDT71256L25TD IDT71256L25TDB IDT71256L25Y IDT71256L25YB IDT71256L30D IDT71256L30DB IDT71256L30L IDT71256L30LB IDT71256L30P IDT71256L30PB IDT71256L30TD IDT71256L30TDB IDT71256L30Y IDT71256L30YB IDT71256L35D IDT71256L35DB IDT71256L35L IDT71256L35LB IDT71256L35P IDT71256L35PB IDT71256L35TD IDT71256L35TDB IDT71256L35Y IDT71256L35YB IDT71256L45D IDT71256L45DB IDT71256L45L IDT71256L45LB IDT71256L45P IDT71256L45PB IDT71256L45TD IDT71256L45TDB IDT71256L45Y IDT71256L45YB IDT71256L55D IDT71256L55DB IDT71256L55L IDT71256L55LB I
OCR Text ...) ceramic DIP, a 28-pin 300 mil j-bend SOlC, and a 28-pin (600 mil) plastic DIP, and 32-pin LCC providing high board-level packing densities. The IDT71256 military RAM is manufactured in compliance with the latest revision of MIL-STD-883, C...
Description Precision Adjustable (Programmable) Shunt Reference 8-CDIP -55 to 125 的CMOS静态RAM 256K2K的8位)
Dual Pulse-Width-Modulation Control Circuit 16-SSOP 的CMOS静态RAM 256K2K的8位)
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 25 ns, CDIP28
Single UART with 16-Byte FIFOs and Auto Flow Control 44-PLCC 0 to 70 的CMOS静态RAM 256K2K的8位)
CABLE SMA/SMA 36 RG-142 的CMOS静态RAM 256K2K的8位)
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 120 ns, CDIP28
Dual-Channel Pulse-Width-Modulation (PWM) Control Circuit 16-SSOP -20 to 85 的CMOS静态RAM 256K2K的8位)
CMOS STATIC RAM 256K (32K x 8-BIT) 的CMOS静态RAM 256K2K的8位)
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDSO28
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDIP28
Replaced by TL16C550C : Single UART with 16-Byte FIFO 40-PDIP 0 to 70
Single UART with 16-Byte FIFOs and Auto Flow Control 48-LQFP 0 to 70
1.8-V to 5-V Dual UART with 16-Byte FIFOs 48-TQFP 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFO 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC -40 to 85
Quad Pulse-Width-Modulation Control Circuit 48-LQFP -20 to 75
CMOS Static RAM 256k ( 32k X 8-bit )

File Size 78.26K  /  9 Page

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    M5M44800CJ M5M44800CJ-5 M5M44800CJ-5S M5M44800CJ-6 M5M44800CJ-6S M5M44800CJ-7 M5M44800CJ-7S M5M44800CTP-5 M5M44800CTP-5S

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. M5M44800CJ M5M44800CJ-5 M5M44800CJ-5S M5M44800CJ-6 M5M44800CJ-6S M5M44800CJ-7 M5M44800CJ-7S M5M44800CTP-5 M5M44800CTP-5S M5M44800CTP-6 M5M44800CTP-6S M5M44800CTP-7 M5M44800CTP-7S M5M44800TP-7S M5M44800TP-6S M5M44800TP-5S M5M44800TP-7 M5M44800TP-6 M5M44800TP-5 M5M44800CJSERIES
OCR Text ...90 110 130 450 375 325 XX=J,TP Outline 28P0K(400mil SOJ) Standard 28pin SOJ, 28pin TSOP (II) Single 5V10% supply Low stand-by powe...Bend) APPLICATION Microcomputer memory, Refresh memory for CRT NC:NO CONNECTION PIN DESCRIPTION...
Description FAST PAGE MODE 4194304-BIT (524288-WORD 8-BIT) DYNAMIC FAST PAGE MODE 4194304-BIT (524288-WORD BYBY 8-BIT) DYNAMIC RAM
FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM

File Size 201.22K  /  21 Page

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    MBRS1100 MBRS1100T3

MOTOROLA INC
MOTOROLA[Motorola, Inc]
Part No. MBRS1100 MBRS1100T3
OCR Text ... Surface Mountable Package with j-bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction High Blocking Voltage -- 100 Volts 150C Operating Junction Temperature Guardring for Stress Protection MBRS11...
Description Schottky Power Rectifier(Surface Mount Power Package)

File Size 74.10K  /  4 Page

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    1SMB22AT3 1SMB24AT3 1SMB18AT3 1SMB6.0AT3 1SMB5.0AT3 1SMB51AT3 1SMB14AT3 1SMB30AT3 1SMB16AT3 1SMB36AT3 1SMB54AT3 1SMB15AT

http://
MOTOROLA[Motorola, Inc]
ON Semi
MOTOROLA[Motorola Inc]
Motorola Inc
Motorola, Inc.
Motorola Mobility Holdings, Inc.
Part No. 1SMB22AT3 1SMB24AT3 1SMB18AT3 1SMB6.0AT3 1SMB5.0AT3 1SMB51AT3 1SMB14AT3 1SMB30AT3 1SMB16AT3 1SMB36AT3 1SMB54AT3 1SMB15AT3 1SMB40AT3 1SMB58AT3 1SMB50AT3 1SMB6.5AT3 1SMB7.0AT3 ON0030 1SMB90AT3 1SMB100AT3 1SMB10AT3 1SMB110AT3 1SMB11AT3 1SMB120AT3 1SMB12AT3 1SMB130AT3 1SMB13AT3 1SMB150AT3 1SMB160AT3 1SMB170AT3 1SMB17AT3 1SMB20AT3 1SMB26AT3 1SMB28AT3 1SMB33AT3 1SMB43AT3 1SMB45AT3 1SMB48AT3 1SMB60AT3 1SMB64AT3 1SMB7.5AT3 1SMB70AT3 1SMB75AT3 1SMB78AT3 1SMB8.0AT3 1SMB8.5AT3 1SMB85AT3 1SMB9.0AT3
OCR Text ...REF 5.21 5.59 C K P J H DIM A B C D H J K P S CASE 403A PLASTIC (Refer to Section 10 for Surface Mount, Thermal Data and Footprint Information.) MULTIPLE PACKAGE QUANTITY (MPQ) REQUIREMENTS Package Option Tape and Re...
Description From old datasheet system
600 WATT PEAK POWER
PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE

File Size 51.05K  /  5 Page

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    APT5010B2LC APT5010LLC

ADPOW[Advanced Power Technology]
Part No. APT5010B2LC APT5010LLC
OCR Text ...= 2.26mH, R = 25W, Peak I = 47A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications...
Description Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

File Size 117.68K  /  2 Page

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    APT5010B2LL APT5010LLL

ADPOW[Advanced Power Technology]
Part No. APT5010B2LL APT5010LLL
OCR Text ...= 1.70mH, R = 25W, Peak I = 46A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 55.78K  /  2 Page

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    APT5010B2VFR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT5010B2VFR
OCR Text ...5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total ...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
TERM BLOCK 10MM VERT 3POS PCB 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 64.50K  /  4 Page

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